Germanium-based metal-insulator-semiconductor transistors as a direction for the further development of CMOS technology I. G. Neizvestny Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 421 - 427
Materials science aspects of dielectric film compositions in the planar technology of Ge-based MIS structures E. B. GorokhovK. N. Astankova Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 428 - 433
Optimization of the response of nanowire biosensors O. V. NaumovaB. I. Fomin Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 434 - 437
Current-coltage characteristics of PbSnTe:In films in a magnetic field with electron injection from the contacts D. V. IshchenkoV. S. Epov Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 438 - 441
Negative differential resistance in high-power InGaN/GaN laser diode V. T. ShamirzaevV. A. GaislerT. S. Shamirzaev Physical and Engineering Fundamentals of Microelectronics and Optoelectronics 06 January 2017 Pages: 442 - 446
Three-spectrum multielement photodetector device I. G. NeizvestnyV. N. Shumsky Optical Information Technologies 06 January 2017 Pages: 447 - 452
Quantum key distribution in single-photon communication system D. B. TretyakovA. V. KolyakoI. G. Neizvestny Optical Information Technologies 06 January 2017 Pages: 453 - 461
Radiation detectors based on PbSnTe:In films, sensitive in the terahertz range of the spectrum I. G. NeizvestnyiA. E. KlimovV. N. Shumskii Optical Information Technologies 06 January 2017 Pages: 462 - 474
Study of photon statistics using a compound Poisson distribution and quadrature measurements Yu. I. BogdanovN. A. BogdanovaV. F. Lukichev Optical Information Technologies 06 January 2017 Pages: 475 - 485
Formation of silicon nanocrystals in Si—SiO2—α-Si—SiO2 heterostructures during high-temperature annealing: Experiment and simulation I. G. NeizvestnyV. A. VolodinN. L. Shwartz Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 486 - 495
Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing A. V. DvurechenskiiV. A. VolodinJ. Stuchlik Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 496 - 500
Adatom concentration distribution on an extrawide Si(111) terrace during sublimation D. I. RogiloN. E. RybinA. V. Latyshev Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 501 - 507
Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy M. A. VasilenkoA. G. NastovjakN. L. Shwartz Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 508 - 517
Introscopy in nano- and mesoscopic physics: Single electronics and quantum ballistics V. A. TkachenkoO. A. TkachenkoA. L. Aseev Nanotechnologies in Optics and Electronics 06 January 2017 Pages: 518 - 528
