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NIMS Monographs

Nanoscale Redox Reaction at Metal/Oxide Interface

A Case Study on Schottky Contact and ReRAM

Authors: Nagata, Takahiro

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  • Describes the use of interface control to maximize the potential of materials in nanoscale phenomena
  • Introduces the combinatorial synthesis method for thin film growth used in the optimization of numerous multi-component functional materials 
  • Explains analysis methods combining angle-resolved measurements and hard x-ray photoelectron spectroscopy
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About this book

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.  

The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.


About the authors

Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University. 

His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.


Table of contents (7 chapters)

Table of contents (7 chapters)

Buy this book

eBook 67,40 €
price for India (gross)
  • ISBN 978-4-431-54850-8
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Softcover 79,99 €
price for India (gross)
  • ISBN 978-4-431-54849-2
  • Free shipping for individuals worldwide
  • Immediate ebook access, if available*, with your print order
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Nanoscale Redox Reaction at Metal/Oxide Interface
Book Subtitle
A Case Study on Schottky Contact and ReRAM
Authors
Series Title
NIMS Monographs
Copyright
2020
Publisher
Springer Japan
Copyright Holder
National Institute for Materials Science, Japan
eBook ISBN
978-4-431-54850-8
DOI
10.1007/978-4-431-54850-8
Softcover ISBN
978-4-431-54849-2
Series ISSN
2197-8891
Edition Number
1
Number of Pages
XI, 89
Number of Illustrations
12 b/w illustrations, 51 illustrations in colour
Topics

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