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Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

  • Book
  • © 2000

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Editors:
  1. Peter L. F. Hemment

    1. University of Surrey, Guildford, Surrey, UK

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  2. V. S. Lysenko

    1. Institute of Semiconductor Physics, Kyiv, Ukraine

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  3. A. N. Nazarov

    1. Institute of Semiconductor Physics, Kyiv, Ukraine

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Part of the book series: NATO Science Partnership Subseries: 3 (ASHT, volume 73)

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Table of contents (31 chapters)

  1. Characterisation Methods for SOI

    1. Recombination Current in Fully-Depleted SOI DIODES: Compact Model and Lifetime Extraction

      • T. Ernst, A. Vandooren, S. Cristoloveanu, T. E. Rudenko, J. P. Colinge
      Pages 213-216

    2. Investigation of the Structural and Chemical Properties of SOI Materials by Ellipsometry

      • L. Azabashta, O. I. Zabashta, V. E. Storizhko, E. G. Bortchagovsky, B. N. Romanyuk, V. P. Melnik
      Pages 217-223

    3. Experimental Investigation and Modeling of Coplanar Transmission Lines on SOI Technologies for RF Applications

      • J. Lescot, O. Rozeau, J. Jomaah, J. Boussey, F. Ndagijimana
      Pages 225-231

  2. Perspectives for SOI Structures and Devices

    1. Perspectives of Silicon-on-Insulator Technologies for Cryogenic Electronics

      • C. Claeys, E. Simoen
      Pages 233-247

    2. SOI CMOS for High-Temperature Applications

      • J. P. Colinge
      Pages 249-256

    3. Quantum Effect Devices on SOI Substrates with an Ultrathin Silicon Layer

      • Yasuhisa Omura
      Pages 257-268

    4. Wafer Bonding for Micro-ElectroMechanical Systems (MEMS)

      • Cynthia A. Colinge
      Pages 269-280

    5. A Comprehensive Analysis of the High-Temperature Off-State and Subthreshold Characteristics of SOI Mosfets

      • T. E. Rudenko, V. S. Lysenko, V. I. Kilchytska, A. N. Rudenko
      Pages 281-293

    6. Influence of Silicon Film Parameters on C-V Characteristics of Partially Depleted SOI MOSFETs.

      • D. Tomaszewski, A. Jakubowski, J. Gibki, T. DÄ™bski, M. Korwin-PawÅ‚owski
      Pages 295-305

    7. Effect of Shallow Oxide Traps on the Low-Temperature Operation of SOI Transistors

      • V. S. Lysenko, I. P. Tyagulski, I. N. Osiyuk, Y. V. Gomeniuk
      Pages 307-313

    8. Nanoscale Wave-Ordered Structures on SOI

      • V. K. Smirnov, A. B. Danilin
      Pages 315-320

    9. Thin Partial SOI Power Devices for High Voltage Integrated Circuits

      • F. Udrea, H. T. Lim, D. Garner, A. Popescu, W. Milne, P. L. F. Hemment
      Pages 321-327

  3. Back Matter

    Pages 329-344
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Keywords

About this book

This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting was the second NATO Silicon on Insulator (SOl) Workshop to be held in st the Ukraine where the first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed upon the physical and technical problems to be addressed in order to exploit the advantages of incorporating SOl materials in device and sensor technologies. On this occasion emphasis was placed upon firstly, promoting the use of SOl substrates for a range of novel device and circuit applications and secondly, addressing the economic issues of incorporating SOl processing technologies and device technologies within the framework of the resources available within the laboratories and factories of the Newly Independent States (NIS). The primary goal of both workshops has been the breaking of the barriers that inhibit closer collaboration between scientists and engineers in the NATO countries and the NIS. Indeed, it was a pleasure for attendees at the first meeting to renew acquaintances and for the first time attendees to make new contacts and enjoy the warm hospitality offered by our hosts in Kyiv. An outcome was the forging of new links and concrete proposals for future collaborations.

Editors and Affiliations

  • University of Surrey, Guildford, Surrey, UK

    Peter L. F. Hemment

  • Institute of Semiconductor Physics, Kyiv, Ukraine

    V. S. Lysenko, A. N. Nazarov

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