Overview
- Editors:
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C. Robert Helms
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Stanford University, Stanford, USA
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Bruce E. Deal
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Stanford University, Stanford, USA
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Table of contents (54 chapters)
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Novel Structures, Processes, and Phenomena
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- Peter W. Wyatt, Gregory J. Dunn
Pages 319-328
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- L. K. Wang, C. C.-H. Hsu, W. Chang
Pages 329-336
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- Richard B. Klein, Nelson S. Saks, Richard R. Siergiej
Pages 337-344
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- Dimitrios N. Kouvatsos, Ralph J. Jaccodine, Fred A. Stevie
Pages 345-352
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- Mark Chonko, David Vandenberg, Douglas Keitz
Pages 357-362
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- Y. K. Su, C. J. Hwang, J. D. Lin
Pages 363-370
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Defects and Hot-Carrier Induced Damage in Si-SiO2 Systems
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Front Matter
Pages 371-372
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- M. Schulz, A. Pappas, J. Vennemann
Pages 383-392
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- C. H. Bjorkman, Y. Ma, T. Yasuda, G. Lucovsky
Pages 403-410
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- M. M. Heyns, A. v. Schwerin, A. Kelleher, M. Kubota, S. Verhaverbeke
Pages 411-420
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- W. L. Warren, J. Kanicki, P. J. McWhorter, E. H. Poindexter
Pages 421-426
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Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems
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Front Matter
Pages 427-428
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- D. J. DiMaria, D. Arnold, E. Cartier
Pages 429-438
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- E. Cartier, D. Arnold, E. Eklund, D. J. DiMaria, F. R. McFeely
Pages 439-446
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- Pushkar P. Apte, Taishi Kubota, Krishna C. Saraswat
Pages 447-454
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- Nelson S. Saks, Dennis B. Brown
Pages 455-463
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- M. E. Zvanut, R. E. Stahlbush, W. E. Carlos, H. L. Hughes
Pages 465-472
About this book
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.