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The Structure of Surfaces

  • Book
  • © 1985

Overview

Editors:
  1. Michel A. Hove

    1. Department of Chemistry, University of California, Berkeley, USA

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    You can also search for this editor in PubMed   Google Scholar

  2. S. Y. Tong

    1. Department of Physics and The Laboratory for Surface Studies, The University of Wisconsin-Milwaukee, Milwaukee, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Series in Surface Sciences (SSSUR, volume 2)

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Table of contents (66 chapters)

  1. Clean and Adsorbate-Covered Metals

    2. Atomic Adsorption on Metal Surfaces

      1. Synchrotron X-Ray Scattering Study of a Chemisorption System: Oxygen on Cu(110) Surface
        • K. S. Liang, P. H. Fuoss, G. J. Hughes, P. Eisenberger
        Pages 246-250
      2. Helium Diffraction from Oxygen-Covered Nickel Surfaces
        • Inder P. Batra, T. Engel, K. H. Rieder
        Pages 251-256
      3. Competing Reconstruction Mechanisms in H/Ni(110)
        • R. J. Behm, K. Christmann, C. Ertl, V. Penka, R. Schwankner
        Pages 257-263

    3. Molecular Adsorption on Metal Surfaces

      1. The Uses and Limitations of ESDIAD for Determining the Structure of Surface Molecules
        • Theodore E. Madey
        Pages 264-268
      2. The Study of Simple Reactions at Surfaces by High-Resolution Electron Energy Loss Spectroscopy
        • Neville V. Richardson, C. Damian Lackey, Mark Surman
        Pages 269-275

  2. Semiconductors

    1. Front Matter

      Pages 277-277
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    2. Elemental Semiconductors

      1. Triangle-Dimer Stacking-Fault Model of the Si(111) 7×7 Surface Bonding Configuration
        • E. G. McRae
        Pages 278-284
      2. Structure of the Si (111) 2 × 1 Surface
        • Inder P. Batra, F. J. Himpsel, P. M. Marcus, R. M. Tromp, M. R. Cook, F. Jona et al.
        Pages 285-292
      3. Refinement of the Buckled-Dimer Model for Si(001)2×1
        • Y. S. Shu, W. S. Yang, F. Jona, P. M. Marcus
        Pages 293-297
      4. Surface Relaxation and Vibrational Excitations on the Si (001) 2 × 1 Surface
        • Douglas C. Allan, E. J. Mele
        Pages 298-302

    3. Compound Semiconductors

      1. The Geometric Structure of the (2 × 2) GaAs(111) Surface
        • G. Xu, S. Y. Tong, W. N. Mei
        Pages 303-307
      2. A Comparison Between the Electronic Properties of GaAs(111) and GaAs(<span class="mathjax-tex">\(\bar 1\bar 1\bar 1\)</span>)
        • R. D. Bringans, R. Z. Bachrach
        Pages 308-312
      3. X-Ray Diffraction from the (3 × 3) Reconstructed <span class="mathjax-tex">\(\bar 1\bar 1\bar 1\)</span>B Surface of InSb
        • R. L. Johnson, J. H. Fock, I. K. Robinson, J. Bohr, R. Feidenhans’l, J. Als-Nielsen et al.
        Pages 313-316

    4. Adsorbate-Covered Semiconductors

      1. Atomic and Electronic Structure of p (1 × 1) Overlayers of Sb on the (110) Surfaces of III-V Semiconductors
        • C. B. Duke, C. Mailhiot, A. Paton, K. Li, C. Bonapace, A. Kahn
        Pages 317-320
      2. Models for Si (111) Surface upon Ge Adsorption
        • S. B. Zhan, John E. Northrup, Marvin L. Cohen
        Pages 321-325
      3. The Graphite (0001)-(2 × 2)K Surface Intercalated Structure
        • N. J. Wu, A. Ignatiev
        Pages 326-331

  3. Defects and Phase Transitions

    1. Front Matter

      Pages 333-333
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Keywords

Editors and Affiliations

  • Department of Chemistry, University of California, Berkeley, USA

    Michel A. Hove

  • Department of Physics and The Laboratory for Surface Studies, The University of Wisconsin-Milwaukee, Milwaukee, USA

    S. Y. Tong

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