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Picosecond Electronics and Optoelectronics II

Proceedings of the Second OSA-IEEE (LEOS) Incline Village, Nevada, January 14–16, 1987

  • Conference proceedings
  • © 1987

Overview

Editors:
  1. Frederick John Leonberger

    1. United Technologies Research Center, East Hartford, USA

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  2. Chi H. Lee

    1. Dept. of Electrical Engineering, University of Maryland, College Park, USA

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  3. Federico Capasso

    1. AT&T Bell Laboratories, Murray Hill, USA

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  4. Hadis Morkoc

    1. Dept. of Electrical Engineering, University of Illinois, Champaign Urbana, USA

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Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 24)

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Table of contents (62 papers)

  1. Transient Transport

    1. Monte Carlo Investigation of Hot Photoexcited Electron Relaxation in GaAs

      • M. A. Osman, H. L. Grubin, P. Lugli, M. J. Kann, D. K. Ferry
      Pages 82-85

    2. Longitudinally Localized Optical Carrier Injection for Femtosecond Transport Studies

      • D. H. Reitze, T. R. Nuss, M. Downer
      Pages 86-88

    3. Femtosecond Nonequilibrium Electronic Heat Transport in Thin Gold Films

      • S. D. Brorson, J. G. Fujimoto, E. P. Ippen
      Pages 89-92

  2. Ballistic Transport and Resonant Tunneling

    1. Front Matter

      Pages 93-93
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    2. Ballistic Transport and Energy Spectroscopy of Hot Electrons in THETA Devices

      • M. Heiblum
      Pages 94-101

    3. Microwave and Millimeter-Wave Resonant Tunneling Diodes

      • T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue
      Pages 102-108

    4. Quantum Transport Calculation of Resonant-Tunneling Response Time

      • W. R. Frensley
      Pages 109-112

    5. Resonant Tunneling Electron Spectroscopy

      • F. Capasso, S. Sen, A. Y. Cho, A. L. Hutchinson
      Pages 113-115

    6. Analysis of Transit Time Effects due to Spacer Layers in Quantum Well Oscillators

      • V. P. Kesan, T. D. Linton, P. A. Blakey, D. P. Neikirk, B. G. Streetman
      Pages 116-120

  3. Quantum Wells

    1. Front Matter

      Pages 121-121
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    2. High-Speed Phenomena in GaAs Multiple-Quantum-Well Structures

      • A. Mysyrowicz, D. Hulin, A. Migus, A. Antonetti, H. M. Gibbs, N. Peyghambarian et al.
      Pages 122-126

    3. Picosecond Carrier Transport in GaAs Quantum Wells

      • J. Shah, R. A. Höpfel
      Pages 127-134

    4. Quantum-Confined Stark Effect in InGaAs/InP Quantum Wells Grown by Metal-Organic Chemical Vapor Deposition

      • I. Bar-Joseph, C. Klingshirn, D. A. B. Miller, D. S. Chemla, U. Koren, B. I. Miller
      Pages 135-138

    5. Dynamics of Below-Gap Photoexcitation in GaAs Quantum Wells

      • J. E. Zucker, D. S. Chemla, A. Von Lehmen, J. P. Heritage
      Pages 139-142

    6. Optical Reading of InGaAs Modulation Doped Field Effect Transistor

      • I. Bar-Joseph, D. S. Chemla, C. Klingshirn, D. A. B. Miller, J. M. Kuo, T. Y. Chang
      Pages 143-146

  4. High-Speed Electronic Devices

    1. Front Matter

      Pages 147-147
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    2. Molecular Beam Epitaxy (MBE) for High-Speed Devices

      • A. Y. Cho
      Pages 148-151

    3. Multigigahertz Logic Based on InP MISFETs Exhibiting Extremely High Transconductance

      • A. Antreasyan, P. A. Garbinski, V. D. Mattera Jr., H. Temkin
      Pages 152-155

    4. Millimeter-Wave Integrated Circuits

      • B. E. Spielman
      Pages 156-159

    5. Enhanced Performance Ultrabroadband Distributed Amplifiers

      • G. Zdasiuk, M. Riaziat, R. LaRue, C. Yuen, S. Bandy
      Pages 160-164
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Keywords

About this book

Over the past five years, there has been an enormous increase in the inter­ est in and understanding of electronic and optoelectronic devices operating in the picosecond (multigigahertz) range. This has been fueled in a sig­ nificant way by the spectacular advances in picosecond laser technology, electro optic sampling, III-V devices, and wideband fiber optic systems. Partly to address these advances, a new conference jointly sponsored by the IEEE Lasers and Electrooptics Society (IEEE (LEOS)) and the Op­ tical Society of America (OSA) was founded and its first meeting held in March 1985. The purpose of this meeting was to bring together work­ ers in the areas of electronics and optoelectronics who share a common interest in the physics and technology of picosecond solid-state electronic and optoelectronic devices, their multigigahertz applications, and ultrafast measurement techniques. Emphasis was placed on the interdisciplinary as­ pects of these areas, since each area is covered by its own topical meeting. This meeting was quite successful and led to a second meeting, of which this volume forms the proceedings.

Editors and Affiliations

  • United Technologies Research Center, East Hartford, USA

    Frederick John Leonberger

  • Dept. of Electrical Engineering, University of Maryland, College Park, USA

    Chi H. Lee

  • AT&T Bell Laboratories, Murray Hill, USA

    Federico Capasso

  • Dept. of Electrical Engineering, University of Illinois, Champaign Urbana, USA

    Hadis Morkoc

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