Silicon Carbide Ceramics—1

1. Front Matter

   Pages i-xiii

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2. Crystal Chemistry of Silicon Carbide

   • Yoshizo Inomata

   Pages 1-11

3. Properties and Applications of Silicon Carbide Ceramics

   • Koichi Yamada, Masahide Mohri

   Pages 13-44

4. Epitaxial Growth of SiC Single Crystal Films

   • Yoshiharu Nakajima

   Pages 45-75

5. Silicon Carbide Prepared by Chemical Vapor Deposition

   • Toshio Hirai, Makoto Sasaki

   Pages 77-98

6. Continuous Silicon Carbide Fibers

   • Kiyohito Okamura

   Pages 99-118

7. Preparation and Sintering Properties of Ultrafine Silicon Carbide Powder Obtained by Vapor Phase Reaction

   • Morinobu Endo, Nobuaki Urasato

   Pages 119-147

8. Sintering Behavior of Ultrafine Silicon Carbide Powder

   • Junichi Hojo

   Pages 149-168

9. Grain Boundaries in High-Purity Silicon Carbide

   • Yoichi Ishida, Hideki Ichinose, Yoshizo Inomata

   Pages 169-183

10. Grain Boundary and High-Temperature Strength in SiC

    • Hiroaki Kurishita, Hideo Yoshinaga, Yuichi Ikuhara

    Pages 185-211

11. Sintering of Silicon Carbide

    • Hidehiko Tanaka

    Pages 213-238

12. Joining of SiC Ceramics

    • Takayoshi Iseki

    Pages 239-263

13. Multiple Toughening in Al2O3/SiC Whisker/ZrO2 Composites

    • Tetsuo Uchiyama, Sigeo Inoue, Koichi Niihara

    Pages 265-274

14. Sintering Aids and Thermal Conductivity of Polycrystalline SiC

    • Tosikazu Sakai, Naoto Hirosaki, Toshihiko Aikawa

    Pages 275-288

15. Back Matter

    Pages 289-294

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Discovered by Edward G. Acheson about 1890, silicon carbide is one of the oldest materials and also a new material. It occurs naturally in meteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require­ ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies. In 1974, S. Prochazka reported that the addition of small amounts of boron compounds and carbide were effective in the sintering process to obtain high density. It was then possible to produce high density sintered bodies by pressureless sintering methods in ordinary atmosphere. Since this development, silicon carbide has received great attention as one of the high temperature structural ceramic materials. Since the 1970s, many research papers have appeared which report studies of silicon carbide and silicon nitride for structural ceramics.

• ceramics

• The Nishi Tokyo University, Japan

  Shigeyuki Sömiya

• Tokyo Institute of Technology, Japan

  Shigeyuki Sömiya

• National Institute for Research in Inorganic Materials, Tsukuba, Japan

  Yoshizo Inomata

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