Lecture Notes in Physics

Defects and Impurities in Silicon Materials

An Introduction to Atomic-Level Silicon Engineering

Editors: Yoshida, Yutaka, Langouche, Guido (Eds.)

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  • Provides the basic physics behind the modeling and evaluation techniques used in silicon materials science 
  • Presents atomistic insight into the defects and the impurities in silicon materials such as ULSI, photonic crystals, solar cells, power devices, and nanostructure devices
  • Includes tutorials in silicon materials science by the top scientists in this research field 
  • Encourages and helps to prepare young researchers and technicians for the time when there is a generation change in this field
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About this book

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. 
The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

About the authors

Prof. Yutaka Yoshida
Since 2004 Yutaka Yoshida is professor in Materials and Bio Science at Shizuoka Institute of Science and Technology (SIST) Japan. He is also the director of SIST Advanced instrumental analysis center. After obtaining his doctoral degree from Osaka University under the guidance of emeritus Professor F.E. Fujita, and he stayed in the group of Professor Gero Vogl as a guest scientist at the Hahn-Meitner Institute Berlin, Germany, in the period between 1983 and 1985, and 1990, and also as a research assistant at the Institute of solid state physics, Universität Wien, Austria, between 1986 and 1989.
Since 1993 he is a guest Scientist at the RIKEN, Japan. He served for the chairperson of ICAME 2011 at Kobe and also will be the chairperson for 7th Forum of Science and Technology of Silicon Materials 2014 (Hamamatsu).

Prof.Guido Langouche
Since 2010 Guido Langouche is emeritus professor in nuclear solid state physics at the
University of Leuven. After obtaining his doctoral and habilitation degrees from K.U. Leuven, he was post-doc at the universities of Stanford and Groningen and guest professor at the universities of Osaka, Lyon and Kinshasa. From 1995 till 2005 he was vice-rector of K.U. Leuven. From 2005 till 2010 he was chairman of the Coimbra Group, an academic collaboration network of 40 of Europe’s longest-established research-intensive universities. He was also vice-president of NVAO, the Accreditation Agency for the Netherlands and Flanders, residing in The Hague, where he was appointed in 2007 jointly by the Dutch and Flemish Ministers of Education. Since 2011 he is also Secretary of INQAAHE, the International Network for Quality Assurance Agencies in Higher Education.
He is editor-in-chief of the Hyperfine Interactions journal.

Table of contents (9 chapters)

Table of contents (9 chapters)
  • Diffusion and Point Defects in Silicon Materials

    Pages 1-67

    Bracht, Hartmut

  • Density Functional Modeling of Defects and Impurities in Silicon Materials

    Pages 69-127

    Coutinho, José

  • Electrical and Optical Defect Evaluation Techniques for Electronic and Solar Grade Silicon

    Pages 129-180

    Peaker, Anthony R. (et al.)

  • Control of Intrinsic Point Defects in Single-Crystal Si and Ge Growth from a Melt

    Pages 181-240

    Vanhellemont, Jan (et al.)

  • Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells

    Pages 241-272

    Gao, Bing (et al.)

Buy this book

eBook $59.99
price for USA in USD
  • ISBN 978-4-431-55800-2
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • Immediate eBook download after purchase and usable on all devices
  • Bulk discounts available
Softcover $79.99
price for USA in USD
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Bibliographic Information

Bibliographic Information
Book Title
Defects and Impurities in Silicon Materials
Book Subtitle
An Introduction to Atomic-Level Silicon Engineering
Editors
  • Yutaka Yoshida
  • Guido Langouche
Series Title
Lecture Notes in Physics
Series Volume
916
Copyright
2015
Publisher
Springer Japan
Copyright Holder
Springer Japan
eBook ISBN
978-4-431-55800-2
DOI
10.1007/978-4-431-55800-2
Softcover ISBN
978-4-431-55799-9
Series ISSN
0075-8450
Edition Number
1
Number of Pages
XV, 487
Number of Illustrations
112 b/w illustrations, 180 illustrations in colour
Topics