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Computational Microelectronics

The Drift Diffusion Equation and Its Applications in MOSFET Modeling

Authors: Hänsch, Wilfried

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To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two­ dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.

Table of contents (5 chapters)

Table of contents (5 chapters)

Buy this book

eBook $89.00
price for USA in USD
  • ISBN 978-3-7091-9095-1
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Softcover $119.99
price for USA in USD
  • ISBN 978-3-7091-9097-5
  • Free shipping for individuals worldwide
  • Immediate ebook access, if available*, with your print order
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
The Drift Diffusion Equation and Its Applications in MOSFET Modeling
Authors
Series Title
Computational Microelectronics
Copyright
1991
Publisher
Springer-Verlag Wien
Copyright Holder
Springer-Verlag/Wien
eBook ISBN
978-3-7091-9095-1
DOI
10.1007/978-3-7091-9095-1
Softcover ISBN
978-3-7091-9097-5
Series ISSN
0179-0307
Edition Number
1
Number of Pages
XII, 271
Topics

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