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Springer Series in Solid-State Sciences

Electronic Properties of Doped Semiconductors

Authors: Shklovskii, B.I., Efros, A.L.

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About this book

First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish­ ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop­ ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys­ ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Table of contents (14 chapters)

Table of contents (14 chapters)
  • The Structure of Isolated Impurity States

    Pages 2-24

    Shklovskii, Professor Dr. Boris I. (et al.)

  • Localization of Electronic States

    Pages 25-51

    Shklovskii, Professor Dr. Boris I. (et al.)

  • The Structure of the Impurity Band for Lightly Doped Semiconductors

    Pages 52-73

    Shklovskii, Professor Dr. Boris I. (et al.)

  • A General Description of Hopping Conduction in Lightly Doped Semiconductors

    Pages 74-93

    Shklovskii, Professor Dr. Boris I. (et al.)

  • Percolation Theory

    Pages 94-136

    Shklovskii, Professor Dr. Boris I. (et al.)

Buy this book

eBook $84.99
price for USA in USD (gross)
  • ISBN 978-3-662-02403-4
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Softcover $109.99
price for USA in USD
  • ISBN 978-3-662-02405-8
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Electronic Properties of Doped Semiconductors
Authors
Translated by
Luryi, S.
Series Title
Springer Series in Solid-State Sciences
Series Volume
45
Copyright
1984
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-662-02403-4
DOI
10.1007/978-3-662-02403-4
Softcover ISBN
978-3-662-02405-8
Series ISSN
0171-1873
Edition Number
1
Number of Pages
XII, 388
Topics