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Amorphous and Crystalline Silicon Carbide and Related Materials

Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987

  • Conference proceedings
  • © 1989

Overview

Editors:
  1. Gary L. Harris
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    You can also search for this editor in PubMed   Google Scholar

  2. Cary Y.-W. Yang
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    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Proceedings in Physics (SPPHY, volume 34)

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About this book

Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

Bibliographic Information

  • Book Title: Amorphous and Crystalline Silicon Carbide and Related Materials

  • Book Subtitle: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987

  • Editors: Gary L. Harris, Cary Y.-W. Yang

  • Series Title: Springer Proceedings in Physics

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1989

  • Softcover ISBN: 978-3-642-93408-7Published: 19 January 2012

  • Series ISSN: 0930-8989

  • Series E-ISSN: 1867-4941

  • Edition Number: 1

  • Number of Pages: IX, 199

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