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Ion Implantation in Semiconductors

Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28, 1971, Garmisch-Partenkirchen, Bavaria, Germany

Editors: Ruge, Ingolf, Graul, J. (Eds.)

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  • ISBN 978-3-642-80660-5
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Softcover $139.00
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  • ISBN 978-3-642-80662-9
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About this book

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power­ ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori­ ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.

Table of contents (68 chapters)

Table of contents (68 chapters)
  • Ionization and Thermal Dependences of Implantation Disorder in Silicon

    Pages 1-1

    Picraux, S. T. (et al.)

  • Localized Mode of Substitutional Carbon in Ion-Implanted Silicon

    Pages 2-6

    Stein, H. J.

  • Inventory of Paramagnetic Defects in Ion-Implanted Silicon

    Pages 7-7

    Brower, K. L. (et al.)

  • Structural Differences in Light and Heavy Ion Disorder in Si Studied by Single and Double Alignment Channeling Techniques

    Pages 8-16

    Hirvonen, J. K. (et al.)

  • Investigation of Ion Implantation Damage with Stress Measurements

    Pages 17-22

    EerNisse, E. P.

Buy this book

eBook $109.00
price for USA in USD (gross)
  • ISBN 978-3-642-80660-5
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Softcover $139.00
price for USA in USD
  • ISBN 978-3-642-80662-9
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Ion Implantation in Semiconductors
Book Subtitle
Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28, 1971, Garmisch-Partenkirchen, Bavaria, Germany
Editors
  • Ingolf Ruge
  • J. Graul
Copyright
1971
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag, Berlin · Heidelberg
eBook ISBN
978-3-642-80660-5
DOI
10.1007/978-3-642-80660-5
Softcover ISBN
978-3-642-80662-9
Edition Number
1
Number of Pages
XIV, 508
Topics