Mesoscopic Physics and Electronics

1. Front Matter

   Pages I-XIV

   PDF

2. Introduction — Mesoscopic Systems

   1. Introduction

      • T. Ando

      Pages 1-2

   2. Length Scales Characterizing Mesoscopic Systems

      • T. Ando

      Pages 3-10

   3. Landauer’s Formula

      • T. Ando

      Pages 11-14

   4. Fluctuations and Aharonov-Bohm Effect

      • H. Fukuyama

      Pages 15-21

   5. Ballistic Electron Transport

      • A. Kawabata

      Pages 22-30

   6. Coulomb Blockade

      • A. Kawabata

      Pages 31-43

3. Transport in Quantum Structures

   1. Tomonaga—Luttinger Liquid in Quantum Wires

      • M. Ogata, H. Fukuyama

      Pages 45-53

   2. Quantum Wires

      • A. Kawabata

      Pages 54-60

   3. Magnetophonon Resonance in Quantum Wires

      • N. Mori, C. Hamaguchi

      Pages 61-65

   4. Quantum Dots and Artificial Atoms

      • S. Tarucha

      Pages 66-71

   5. Antidot Lattices — Classical and Quantum Chaos

      • T. Ando

      Pages 72-89

   6. Electric and Magnetic Lateral Superlattices

      • Y. Iye

      Pages 90-95

   7. Terahertz Spectroscopy of Nanostructures

      • K. Hirakawa

      Pages 96-103

   8. Wannier—Stark Effect in Transport

      • M. Morifuji, C. Hamaguchi

      Pages 104-108

4. Quantum Hall Effect

   1. Crossover from Quantum to Classical Regime

      • T. Ando

      Pages 109-119

   2. Edge States and Nonlocal Effects

      • S. Komiyama

      Pages 120-131

   3. Magnetocapacitance and Edge States

      • K. Murase, S. Takaoka, K. Oto

      Pages 132-137

5. Electron-Photon Interaction in Nanostructures

   1. Introduction

      • Y. Arakawa

      Pages 139-139

   2. Theory of Electron-Photon Interaction

      • A. Shimizu

      Pages 140-155

Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea­ ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog­ raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal­ oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

• ASTER
• circuit
• development
• diffraction
• electronics
• laser
• nanostructure
• quantum chaos
• quantum dot
• spectroscopy
• superlattice
• surface

• Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo 106, Japan

  T. Ando

• Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106, Japan

  Y. Arakawa

• Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan

  K. Furuya

• Department of Basic Science, University of Tokyo, Meguro-ku, Tokyo 153, Japan

  S. Komiyama

• Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan

  H. Nakashima

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