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Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties

  • Book
  • © 2011

Overview

Authors:
  1. Hamid Bentarzi

    1. , Dept.of Electrical Engineering and Elect, University of Boumerdes, Boumerdes, Algeria

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  • Reviewed state-of-the-art Comprehensive for students Improves the understanding of transport phenomena
  • Includes supplementary material: sn.pub/extras

Part of the book series: Engineering Materials (ENG.MAT.)

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Table of contents (7 chapters)

  1. Front Matter

    Pages i-xiii
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  2. Introduction

    • Hamid Bentarzi
    Pages 1-4

  3. The MOS Structure

    • Hamid Bentarzi
    Pages 5-16

  4. The MOS Oxide and Its Defects

    • Hamid Bentarzi
    Pages 17-28

  5. Review of Transport Mechanism in Thin Oxides of MOS Devices

    • Hamid Bentarzi
    Pages 29-37

  6. Experimental Techniques

    • Hamid Bentarzi
    Pages 39-58

  7. Theoretical Approaches of Mobile Ions Density Distribution Determination

    • Hamid Bentarzi
    Pages 59-82

  8. Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide

    • Hamid Bentarzi
    Pages 83-102

  9. Back Matter

    Pages 103-104
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Keywords

About this book

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Authors and Affiliations

  • , Dept.of Electrical Engineering and Elect, University of Boumerdes, Boumerdes, Algeria

    Hamid Bentarzi

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