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Advances in Solid State Physics

Festkörperprobleme

Editors: Rossler, U. (Hrsg.)

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Table of contents (8 chapters)

Table of contents (8 chapters)
  • Charge-induced structural relaxation in hydrogenated amorphous silicon

    Pages 1-20

    Stutzmann, Martin

  • Magnetooptics of two-dimensional electrons under the conditions of integral and fractional quantum hall effect in Si-MOSFETs and GaAs-AlGaAs single heterojunctions

    Pages 21-43

    Kukushkin, Igor (et al.)

  • Microwave investigations of the quantum hall effect in GaAs/AlGaAs heterostructures

    Pages 45-62

    Kuchar, Friedl

  • Recent developments in the theory of highly excited semiconductors

    Pages 63-85

    Schäfer, Wilfried

  • The development of a 4 Mbit DRAM

    Pages 87-98

    Beinvogl, Willy (et al.)

Buy this book

eBook $54.99
price for USA in USD
  • The eBook version of this title will be available soon
  • ISBN 978-3-540-75352-0
  • Digitally watermarked, DRM-free
  • Included format:
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
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Bibliographic Information

Bibliographic Information
Book Title
Festkörperprobleme
Editors
  • U. Rossler
Series Title
Advances in Solid State Physics
Series Volume
28
Copyright
1988
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer Fachmedien Wiesbaden
eBook ISBN
978-3-540-75352-0
DOI
10.1007/BFb0107844
Series ISSN
1438-4329
Edition Number
1
Number of Pages
VI, 178
Topics