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Springer Series in Materials Science

Nitride Semiconductors and Devices

Authors: Morkoç, Hadis

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About this book

A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn­ thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim­ al. [3] in 1959 employed the same technique to produce small cry­ meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans­ port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli­ berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro­ as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.

Table of contents (12 chapters)

Table of contents (12 chapters)

Buy this book

eBook $149.00
price for USA in USD (gross)
  • ISBN 978-3-642-58562-3
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $279.99
price for USA in USD
  • ISBN 978-3-540-64038-7
  • Free shipping for individuals worldwide
  • Immediate ebook access, if available*, with your print order
  • Usually dispatched within 3 to 5 business days.
Softcover $199.99
price for USA in USD
  • ISBN 978-3-642-63647-9
  • Free shipping for individuals worldwide
  • Immediate ebook access, if available*, with your print order
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Nitride Semiconductors and Devices
Authors
Series Title
Springer Series in Materials Science
Series Volume
32
Copyright
1999
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-642-58562-3
DOI
10.1007/978-3-642-58562-3
Hardcover ISBN
978-3-540-64038-7
Softcover ISBN
978-3-642-63647-9
Series ISSN
0933-033X
Edition Number
1
Number of Pages
XXIV, 489
Number of Illustrations
267 b/w illustrations, 7 illustrations in colour
Topics

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