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Springer Series in Materials Science

Fundamental Aspects of Silicon Oxidation

Editors: Chabal, Yves J. (Ed.)

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eBook $109.00
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  • ISBN 978-3-642-56711-7
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Hardcover $159.99
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  • ISBN 978-3-540-41682-1
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Softcover $139.99
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  • ISBN 978-3-642-62583-1
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About this book

This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides).

Reviews

From the reviews:

"Silicon remains the dominant microelectronic material … . One of the reasons for this is the ‘extraordinary perfection’ of its interface with its thermally grown oxide. … The book provides a valuable snapshot as at early 2000 of the range of diverse approaches, both theoretical and experimental, being applied … by some of the leading practitioners in this field. It would be of interest to scientists and engineers with a specialist’s interest in this or related interfaces." (M. A. Green, The Physicist, Vol. 38 (6), 2001)


Table of contents (12 chapters)

Table of contents (12 chapters)

Buy this book

eBook $109.00
price for USA in USD (gross)
  • ISBN 978-3-642-56711-7
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $159.99
price for USA in USD
  • ISBN 978-3-540-41682-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $139.99
price for USA in USD
  • ISBN 978-3-642-62583-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Fundamental Aspects of Silicon Oxidation
Editors
  • Yves J. Chabal
Series Title
Springer Series in Materials Science
Series Volume
46
Copyright
2001
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-642-56711-7
DOI
10.1007/978-3-642-56711-7
Hardcover ISBN
978-3-540-41682-1
Softcover ISBN
978-3-642-62583-1
Series ISSN
0933-033X
Edition Number
1
Number of Pages
XIII, 262
Number of Illustrations
126 b/w illustrations, 21 illustrations in colour
Topics