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Microscopy of Semiconducting Materials

Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK

  • Conference proceedings
  • © 2005

Overview

Editors:
  1. A. G. Cullis

    1. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK

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  2. J. L. Hutchison

    1. Department of Materials, University of Oxford, Oxford, UK

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Part of the book series: Springer Proceedings in Physics (SPPHY, volume 107)

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Table of contents (113 papers)

  1. Front Matter

    Pages I-XVI
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  2. Epitaxy: Wide Band-Gap Nitrides

    1. Front Matter

      Pages 1-1
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    2. Structural properties of GaN quantum dots

      • B Daudin, J -L Rouvière, D Jalabert, J Coraux, V Favre-Nicolin, H Renevier et al.
      Pages 3-12

    3. Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes

      • N K van der Laak, R A Oliver, M J Kappers, C McAleese, C J Humphreys
      Pages 13-16

    4. Investigation of InxGa1−x N islands with electron microscopy

      • A Pretorius, T Yamaguchi, M Schowalter, R Kröger, C Kübel, D Hommel et al.
      Pages 17-20

    5. First stage of nucleation of GaN on (0001) sapphire

      • Y B Kwon, J H Je, P Ruterana, G Nouet
      Pages 21-24

    6. In GaN-GaN quantum wells: their luminescent and nano-structural properties

      • J S Barnard, D M Graham, T M Smeeton, M J Kappers, P Dawson, M Godfrey et al.
      Pages 25-28

    7. Evolution of InGaN/GaN nanostructures and wetting layers during annealing

      • Rachel A Oliver, Nicole K van der Laak, Menno J Kappers, Colin J Humphreys
      Pages 29-32

    8. Origins and reduction of threading dislocations in GaN epitaxial layers

      • S Mahajan
      Pages 33-43

    9. Oxygen segregation to nanopipes in gallium nitride

      • M Hawkridge, D Cherns
      Pages 45-50

    10. Strain relaxation in (Al,Ga)N/GaN heterostructures

      • P Vennéguès, J M Bethoux, Z Bougrioua, M Azize, P De Mierry, O Tottereau
      Pages 51-54

    11. A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures

      • P D Cherns, C McAleese, M J Kappers, C J Humphreys
      Pages 55-58

    12. Reduction of threading dislocation density using in-situ SiNx interlayers

      • R Datta, M J Kappers, J S Barnard, C J Humphreys
      Pages 59-62

    13. The nucleation structure for cracks in AlGaN epitaxial layers

      • R T Murray, P J Parbrook, G Hill, I M Ross
      Pages 63-66

    14. Microstructural and optical characterisation of InN layers grown by MOCVD

      • P Singh, P Ruterana, G Nouet, A Jain, J M Redwing, M Wojdak
      Pages 67-70

    15. Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE

      • A Delimitis, Ph Komninou, Th Kehagias, Th Karakostas, E Dimakis, A Georgakilas et al.
      Pages 71-74

    16. Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

      • S Saravanan, E G Keim, G J M Krijnen, M Elwenspoek
      Pages 75-78

    17. Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers

      • R Kröger, C Kruse, J Dennemarck, D Hommel, A Rosenauer
      Pages 79-82

    18. Characterization of defects in ZnS and GaN

      • J Deneen, S Kumar, C R Perrey, C B Carter
      Pages 83-86

  3. Epitaxy: Silicon-Germanium Alloys

    1. Front Matter

      Pages 87-87
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Keywords

About this book

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Editors and Affiliations

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK

    A. G. Cullis

  • Department of Materials, University of Oxford, Oxford, UK

    J. L. Hutchison

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