NanoScience and Technology

Silicon Quantum Integrated Circuits

Silicon-Germanium Heterostructure Devices: Basics and Realisations

Authors: Kasper, E., Paul, D.J.

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About this book

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Table of contents (11 chapters)

Table of contents (11 chapters)
  • Introduction

    Pages 1-12

  • Material Science

    Pages 13-47

  • Resumé of Semiconductor Physics

    Pages 49-116

  • Realisation of Potential Barriers

    Pages 117-142

  • Electronic Device Principles

    Pages 143-188

Buy this book

eBook $189.00
price for USA in USD
  • ISBN 978-3-540-26382-1
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $249.99
price for USA in USD
Softcover $249.99
price for USA in USD
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Bibliographic Information

Bibliographic Information
Book Title
Silicon Quantum Integrated Circuits
Book Subtitle
Silicon-Germanium Heterostructure Devices: Basics and Realisations
Authors
Series Title
NanoScience and Technology
Copyright
2005
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-540-26382-1
DOI
10.1007/b137494
Hardcover ISBN
978-3-540-22050-3
Softcover ISBN
978-3-642-06038-0
Series ISSN
1434-4904
Edition Number
1
Number of Pages
XII, 364
Topics