Springer Series in Advanced Microelectronics

High Dielectric Constant Materials

VLSI MOSFET Applications

Editors: Huff, Howard, Gilmer, David (Eds.)

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About this book

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Table of contents (21 chapters)

Table of contents (21 chapters)
  • The Economic Implications of Moore's Law

    Pages 1-30

    Hutcheson, G.D.

  • Brief Notes on the History of Gate Dielectrics in MOS Devices

    Pages 33-44

    Kooi†, E. (et al.)

  • SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

    Pages 45-90

    Irene, E.A.

  • Oxide Reliability Issues

    Pages 91-120

    Degraeve, R.

  • Gate Dielectric Scaling to 2.0—1.0 nm: SiO2 and Silicon Oxynitride

    Pages 123-142

    Lo, S.-H. (et al.)

Buy this book

eBook $299.00
price for USA in USD
  • ISBN 978-3-540-26462-0
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
  • Institutional customers should get in touch with their account manager
Hardcover $379.99
price for USA in USD
Softcover $379.99
price for USA in USD
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Bibliographic Information

Bibliographic Information
Book Title
High Dielectric Constant Materials
Book Subtitle
VLSI MOSFET Applications
Editors
  • Howard Huff
  • David Gilmer
Series Title
Springer Series in Advanced Microelectronics
Series Volume
16
Copyright
2005
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-540-26462-0
DOI
10.1007/b137574
Hardcover ISBN
978-3-540-21081-8
Softcover ISBN
978-3-642-05921-6
Series ISSN
1437-0387
Edition Number
1
Number of Pages
XXIV, 710
Topics