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Integrated Circuits and Systems

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Editors: Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico (Eds.)

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  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers
  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion
  • Enables design of smaller, cheaper and more efficient power supplies
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eBook $109.00
price for USA in USD (gross)
  • ISBN 978-3-319-77994-2
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $149.99
price for USA in USD
  • ISBN 978-3-319-77993-5
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $149.99
price for USA in USD
  • ISBN 978-3-030-08594-0
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
About this book

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.


  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;
  • Enables design of smaller, cheaper and more efficient power supplies.

About the authors

Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Table of contents (8 chapters)

Table of contents (8 chapters)
  • Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics

    Pages 1-28

    Derluyn, Joff (et al.)

  • Lateral GaN HEMT Structures

    Pages 29-49

    Suh, Chang Soo

  • Vertical GaN Transistors for Power Electronics

    Pages 51-74

    Chowdhury, Srabanti (et al.)

  • Reliability of GaN-Based Power Devices

    Pages 75-99

    Meneghesso, Gaudenzio (et al.)

  • Validating GaN Robustness

    Pages 101-122

    Tanaka, Kenichiro (et al.)

Buy this book

eBook $109.00
price for USA in USD (gross)
  • ISBN 978-3-319-77994-2
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $149.99
price for USA in USD
  • ISBN 978-3-319-77993-5
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $149.99
price for USA in USD
  • ISBN 978-3-030-08594-0
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Editors
  • Gaudenzio Meneghesso
  • Matteo Meneghini
  • Enrico Zanoni
Series Title
Integrated Circuits and Systems
Copyright
2018
Publisher
Springer International Publishing
Copyright Holder
Springer International Publishing AG, part of Springer Nature
eBook ISBN
978-3-319-77994-2
DOI
10.1007/978-3-319-77994-2
Hardcover ISBN
978-3-319-77993-5
Softcover ISBN
978-3-030-08594-0
Series ISSN
1558-9412
Edition Number
1
Number of Pages
XIII, 232
Number of Illustrations
18 b/w illustrations, 165 illustrations in colour
Topics