Overview
- Nominated as an outstanding Ph.D. thesis by the Technical University of Berlin, Germany
- Investigates novel heterostructures: GaSb/GaAs, InGaAs/GaP
- Covers the detection of many-particle hole ground states in QDs
- Presents a highly innovative memory concept
- Includes supplementary material: sn.pub/extras
Part of the book series: Springer Theses (Springer Theses)
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Table of contents (8 chapters)
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Front Matter
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Back Matter
Keywords
About this book
Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times.
This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.
Authors and Affiliations
Bibliographic Information
Book Title: Self-Organized Quantum Dots for Memories
Book Subtitle: Electronic Properties and Carrier Dynamics
Authors: Tobias Nowozin
Series Title: Springer Theses
DOI: https://doi.org/10.1007/978-3-319-01970-3
Publisher: Springer Cham
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer International Publishing Switzerland 2014
Hardcover ISBN: 978-3-319-01969-7Published: 15 October 2013
Softcover ISBN: 978-3-319-37899-2Published: 27 August 2016
eBook ISBN: 978-3-319-01970-3Published: 01 October 2013
Series ISSN: 2190-5053
Series E-ISSN: 2190-5061
Edition Number: 1
Number of Pages: XVI, 153
Number of Illustrations: 82 b/w illustrations, 9 illustrations in colour
Topics: Semiconductors, Nanotechnology, Electronic Circuits and Devices, Nanotechnology and Microengineering, Memory Structures