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Simulation of Semiconductor Processes and Devices 1998

SISPAD 98

  • Conference proceedings
  • © 1998

Overview

Editors:
  1. Kristin Meyer

    1. IMEC vzw, Leuven, Belgium

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    You can also search for this editor in PubMed   Google Scholar

  2. Serge Biesemans

    1. IMEC vzw, Leuven, Belgium

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    You can also search for this editor in PubMed   Google Scholar

  • The latest results in simulation of semiconductor processes and devices are presented
  • This conference is the most important forum for exchanging scientific information

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Table of contents (99 papers)

  1. Front Matter

    Pages I-XIV
    Download chapter PDF

  2. TCAD at the SRC

    • R. Goossens
    Pages 1-2

  3. TCAD in Selete

    • Norihiko Kotani
    Pages 3-7

  4. Integration of Lithography and Etch Simulations

    • Z. Krivokapic, W. D. Heavlin, D. S. Bang
    Pages 8-11

  5. Integrated Three-Dimensional Topography Simulation and its Application to Dual-Damascene Processing

    • E. Bär, W. Henke, S. List, J. Lorenz
    Pages 12-15

  6. Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation

    • W. Pyka, R. Martins, S. Selberherr
    Pages 16-19

  7. Development of a gas-phase chemistry model for numerical prediction of MOVPE of GaN in industrial scale reactors

    • Yu E. Egorov, Yu N. Makarov, I. N. Przhevalskij, R. A. Talalaev, G. Strauch, D. Schmitz et al.
    Pages 20-21

  8. Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings

    • M. Dauelsberg, L. Kadinski, C. Schmidt, C. Allenbach, M. Morstein
    Pages 22-25

  9. Design Optimization of RF Power MOSFET’s Using Large Signal Analysis Device Simulation of Matching Networks

    • F. M. Rotella, G. Ma, Z. Yu, R. W. Dutton
    Pages 26-29

  10. Modeling of Temperature Dependence of a Floating Pad Structure’s RF Properties

    • Tarja Riihisaari, Hannu Ronkainen, Hannu Kattelus, Hannu Hakojärvi
    Pages 30-33

  11. A comprehensive model of a VLSI spiral inductor derived from the first principles

    • V. I. Kol’dyaev, S. Decoutere, R. Kuhn, L. Deferm
    Pages 34-37

  12. Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors

    • S. Marksteiner, H. Schäfer, T. F. Meister, A. Spitzer
    Pages 38-41

  13. Extension of Spherical Harmonic Method to RF Transient Regime

    • C.-K. Lin, Neil Goldsman, C.-H. Chang, Isaak Mayergoyz, Sheldon Aronowitz, Jeffrey Dong et al.
    Pages 42-45

  14. Multiscale Modeling of the Implantation and Annealing of Silicon Devices

    • G. H. Gilmer, L. Pelaz, C. Rafferty, M. Jaraiz
    Pages 46-47

  15. Dynamics of Arsenic dose loss at the SiO2 interface during TED

    • Reza Kasnavi, Peter B. Griffin, James D. Plummer
    Pages 48-50

  16. Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B

    • Kunihiro Suzuki, Norbert Strecker, Wolfgang Fichtner
    Pages 51-54

  17. A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculations

    • Srinivasan Chakravarthi, Scott T. Dunham
    Pages 55-58

  18. Electromagnetic Simulation for the Modeling of Interconnects

    • P. A. Rolland
    Pages 59-60

  19. Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction

    • Xiaoning Qi, Sherry Y. Shen, Ze-Kai Hsiau, Zhiping Yu, Robert Dutton
    Pages 61-64

  20. Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance

    • Hoan H. Pham, Arokia Nathan
    Pages 65-68
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Keywords

About this book

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)

Editors and Affiliations

  • IMEC vzw, Leuven, Belgium

    Kristin Meyer, Serge Biesemans

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