Electronic Materials: Science & Technology
cover

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Editors: Rupp, Jennifer, Ielmini, Daniele, Valov, Ilia (Eds.)

  • Explains diffusive processes at room temperature and materials/materials combination in resistive switching
  • Illustrates the role of defects in zero, one, and two dimensions
  • Features applications of ReRAMs in engineering such as novel computing architectures
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Buy this book

eBook $129.00
price for USA in USD
  • The eBook version of this title will be available soon
  • Due: August 30, 2021
  • ISBN 978-3-030-42424-4
  • Digitally watermarked, DRM-free
  • Included format:
  • ebooks can be used on all reading devices
Hardcover $169.99
price for USA in USD
  • Customers within the U.S. and Canada please contact Customer Service at +1-800-777-4643, Latin America please contact us at +1-212-460-1500 (24 hours a day, 7 days a week). Pre-ordered printed titles are excluded from promotions.
  • Due: August 2, 2021
  • ISBN 978-3-030-42423-7
  • Free shipping for individuals worldwide
  • Institutional customers should get in touch with their account manager
  • Covid-19 shipping restrictions
About this book

This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. 

A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. 

The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.


About the authors

Prof. Jennifer Rupp is the Thomas Lord Associate Professor of Electrochemical Materials at the

Department of Materials Science and Engineering, and Assistant Professor at the Department of

Electrical Engineering and Computer Science at MIT. Prior she is was non-tenure track assistant

professor at ETH Zurich Switzerland where she held two prestigeous externally funded career

grants, namely an ERC Starting Grant (SNSF) and Swiss National Science Foundation (SNF)

professorship.


Buy this book

eBook $129.00
price for USA in USD
  • The eBook version of this title will be available soon
  • Due: August 30, 2021
  • ISBN 978-3-030-42424-4
  • Digitally watermarked, DRM-free
  • Included format:
  • ebooks can be used on all reading devices
Hardcover $169.99
price for USA in USD
  • Customers within the U.S. and Canada please contact Customer Service at +1-800-777-4643, Latin America please contact us at +1-212-460-1500 (24 hours a day, 7 days a week). Pre-ordered printed titles are excluded from promotions.
  • Due: August 2, 2021
  • ISBN 978-3-030-42423-7
  • Free shipping for individuals worldwide
  • Institutional customers should get in touch with their account manager
  • Covid-19 shipping restrictions
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Bibliographic Information

Bibliographic Information
Book Title
Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
Editors
  • Jennifer Rupp
  • Daniele Ielmini
  • Ilia Valov
Series Title
Electronic Materials: Science & Technology
Copyright
2021
Publisher
Springer International Publishing
Copyright Holder
Springer Nature Switzerland AG
eBook ISBN
978-3-030-42424-4
DOI
10.1007/978-3-030-42424-4
Hardcover ISBN
978-3-030-42423-7
Series ISSN
1386-3290
Edition Number
1
Number of Pages
VI, 383
Number of Illustrations
186 b/w illustrations
Topics