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Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

Authors: Sadegh Amiri, Iraj, Mohammadi, Hossein, Hosseinghadiry, Mahdiar

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  • Describes the evolution of MESFET in the semiconductor industry
  • Discusses challenges and solutions associated with downscaling
  • Provides comprehensive information on the structure and operation of silicon MESFETs
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  • ISBN 978-3-030-04513-5
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  • ISBN 978-3-030-04512-8
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About this book

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device.  The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

About the authors

Iraj Sadegh Amiri received his B. Sc (Applied Physics) from Public University of Oroumiyeh, Iran in 2001 and a gold medalist M. Sc. (Physics/Optics)) from University Technology Malaysia (UTM), in 2009. He was awarded a PhD degree in Physics (photonics) in Jan 2014. He has been doing research on several topics such as the optical soliton communications, laser physics, plasmonics photonics devices, nonlinear fiber optics, optoelectronics devices using 2D materials, waveguides, quantum cryptography and nanotechnology engineering.

Hossein Mohammadi was born in Shiraz, Iran, in September 1974. He received the B.Sc. degree from IAU, Dezful, Iran, in 1999, the M.Sc. degree from IAU, Arak, Iran, in 2007, and Ph.D. degree from national university of Malaysia in 2017 all in electrical engineering. He is currently lecturer of Shiraz Pasargad higher education institute in Iran. His research interests include micro and Nano electronics, compact modeling of MOSFET’s and SOI-MESFET’s.

Mahdiar Hosseinghadiry: His research includes VLSI modelling and design especially low power high speed circuits, nano-fabrication, graphene transistor modelling, and laser physics. He has published more than 50 ISI paper so far and he is currently doing research at department of innovation, Allseas Eng., Netherlands.

Table of contents (7 chapters)

Table of contents (7 chapters)
  • Invention and Evaluation of Transistors and Integrated Circuits

    Pages 1-9

    Amiri, Iraj Sadegh (et al.)

  • General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET)

    Pages 11-41

    Amiri, Iraj Sadegh (et al.)

  • Modeling of Classical SOI MESFET

    Pages 43-58

    Amiri, Iraj Sadegh (et al.)

  • Design and Modeling of Triple-Material Gate SOI MESFET

    Pages 59-71

    Amiri, Iraj Sadegh (et al.)

  • Three-Dimensional Analytical Model of the Non-Classical Three-Gate SOI MESFET

    Pages 73-92

    Amiri, Iraj Sadegh (et al.)

Buy this book

eBook $109.00
price for USA in USD (gross)
  • ISBN 978-3-030-04513-5
  • Digitally watermarked, DRM-free
  • Included format: PDF, EPUB
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $149.99
price for USA in USD
  • ISBN 978-3-030-04512-8
  • Free shipping for individuals worldwide
  • Immediate ebook access, if available*, with your print order
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
Authors
Copyright
2019
Publisher
Springer International Publishing
Copyright Holder
Springer Nature Switzerland AG
eBook ISBN
978-3-030-04513-5
DOI
10.1007/978-3-030-04513-5
Hardcover ISBN
978-3-030-04512-8
Edition Number
1
Number of Pages
IX, 122
Number of Illustrations
24 b/w illustrations, 27 illustrations in colour
Topics

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