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Physics of p-n Junctions and Semiconductor Devices

  • Book
  • © 1971

Overview

Editors:
  1. S. M. Ryvkin

    1. Academy of Sciences of the USSR, A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

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  2. Yu. V. Shmartsev

    1. Academy of Sciences of the USSR, A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

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    You can also search for this editor in PubMed   Google Scholar

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Table of contents (68 chapters)

  1. Front Matter

    Pages i-ix
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  2. Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels

    • D. A. Aronov, Ya. P. Kotov
    Pages 1-7

  3. Static Current-Voltage Characteristic of a p-n-p-n Structure in the on State

    • A. A. Lebedev
    Pages 8-10

  4. Distribution of the Intensity of Recombination Radiation and of the Voltage Drop in Diffused p-n Junctions in Gallium Arsenide

    • V. G. Voronin, A. V. Petukhov, I. V. Ryzhikov, V. F. Titova
    Pages 11-15

  5. Low-Energy Recombination Radiation of p-n Junctions in GaAs

    • V. M. Lomako, V. D. Tkachev, D. S. Domanevskii
    Pages 16-17

  6. Electroluminescence and Cathodoluminescence of p-n Junctions in GaAs

    • V. M. Lomako, D. S. Domanevskii, V. D. Tkachev
    Pages 18-22

  7. Film Devices Prepared by the Ion Bombardment Method

    • G. A. Kachurin, A. E. Gorodetskii, V. M. Zelevinskaya, L. S. Smirnov
    Pages 23-25

  8. Kinetics of the Establishment of the Current in Polycrystalline Films of PbS

    • V. G. Butkevich, I. A. Drozd
    Pages 26-28

  9. Investigation of the Time Constants of an Indium Arsenide Laser

    • V. B. Buber, V. V. Nikitin, K. P. Fedoseev
    Pages 29-31

  10. Transient Processes in Semiconductor Injection Lasers with Strong Optical Coupling

    • V. A. Grekhnev, V. D. Kurnosov, A. A. Pleshkov, O. N. Prozorov, L. A. Rivlin, A. T. Semenov et al.
    Pages 32-38

  11. Possibility of Pair Correlation of Electrons and Holes in a Sandwich Consisting of n- and p- Type Semiconductor Films

    • V. G. Kogan, B. A. Tavger
    Pages 39-45

  12. Theory of the Electroacoustic Interaction at a Metal-Semiconductor Point Contact

    • É. G. Melikyan
    Pages 46-50

  13. Investigation of the Field in a Tunnel Diode with a Heterojunction

    • S. N. Dobrynin
    Pages 51-59

  14. Irreversible Changes in the Properties of an Injection Laser at High Excitation Levels

    • Yu. I. Kruzhilin
    Pages 60-64

  15. Electrical Properties of Diffused p-n Junctions in Indium Arsenide

    • Yu. D. Mozzhorin, V. I. Stafeev
    Pages 65-70

  16. Parameters of the Active Region in an Injection Laser

    • Yu. I. Kruzhilin
    Pages 71-75

  17. Minimum Threshold Current for an Injection Laser and Its Relationship with the Gain Factor

    • Yu. I. Kruzhilin
    Pages 76-77

  18. Special Features of Exposure-Illuminance Characteristics of the Photopolarization of HgI2Single Crystals

    • V. F. Zolotarev, D. G. Semak, D. V. Chepur
    Pages 78-83

  19. Alloyed p-n Junctions Made of Be-Doped p-Type SiC

    • A. A. Kal’nin, V. V. Pasynkov, Yu. M. Tairov, D. A. Yas’kov
    Pages 84-88

  20. Modulation of λ = 3.39µ Laser Radiation by Excess Carriers in a Gallium Arsenide Diode

    • Yu. A. Bykovskii, I. G. Goncharov, V. A. Maslov
    Pages 89-91
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Editors and Affiliations

  • Academy of Sciences of the USSR, A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

    S. M. Ryvkin, Yu. V. Shmartsev

Bibliographic Information

  • Book Title: Physics of p-n Junctions and Semiconductor Devices

  • Editors: S. M. Ryvkin, Yu. V. Shmartsev

  • DOI: https://doi.org/10.1007/978-1-4757-1232-2

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1971

  • Softcover ISBN: 978-1-4757-1234-6Published: 16 January 2014

  • eBook ISBN: 978-1-4757-1232-2Published: 12 June 2019

  • Edition Number: 1

  • Number of Pages: IX, 366

  • Number of Illustrations: 30 b/w illustrations

  • Topics: Solid State Physics, Spectroscopy and Microscopy

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