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The IBM Research Symposia Series

Ion Implantation in Semiconductors and Other Materials

Editors: Crowder, Billy (Ed.)

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About this book

During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch­ Partenkirchen, Germany, in 1971. At the present time, our under­ standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta­ tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta­ tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta­ tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.

Table of contents (43 chapters)

  • Radiation Damage in Metals and Semiconductors

    Frank, W.

    Pages 3-16

  • Ionization Effects in Self-Interstitial Migration and Implant Damage Annealing in Silicon

    Norris, C. B. (et al.)

    Pages 17-17

  • Internal Friction Study of Point Defects in Boron-Implanted Silicon

    Tan, S. I. (et al.)

    Pages 19-30

  • Strain Induced Effects on EPR Centers in Silicon Generated By P+ Ion Implantation

    Matsumori, T. (et al.)

    Pages 31-38

  • Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs

    Stein, H. J.

    Pages 39-48

Buy this book

eBook $84.99
price for USA in USD (gross)
  • ISBN 978-1-4684-2064-7
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Softcover $109.00
price for USA in USD
  • ISBN 978-1-4684-2066-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Ion Implantation in Semiconductors and Other Materials
Editors
  • Billy Crowder
Series Title
The IBM Research Symposia Series
Copyright
1973
Publisher
Springer US
Copyright Holder
Plenum Press, New York
eBook ISBN
978-1-4684-2064-7
DOI
10.1007/978-1-4684-2064-7
Softcover ISBN
978-1-4684-2066-1
Edition Number
1
Number of Pages
XII, 658
Topics