Overview
- Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces
- Features fundamental considerations in the physics and chemistry of metal-dielectric interactions
- Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics
- Provides keys to understanding reliability in gigascale electronics
- Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices
- Includes supplementary material: sn.pub/extras
Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 157)
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Table of contents (9 chapters)
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Front Matter
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Back Matter
Keywords
- Cu interconnect technology
- Flatband voltage shifts in metal-dielectric-
- Fundamental science metal-dielectric interfaces
- Low-k dielectrics
- Metal atom diffusion and metal ion drift in dielectrics
- Metal-dielectric interface
- Metal-dielectric interfaces book
- Metal-dielectric interfaces experimental techniques
- Metal-dielectric interfaces stability
- Metal-dielectric interfaces stability book
- Thermal and electric stability of metal-dielectric interfaces
- semiconductor capacitors
About this book
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them.
Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.Authors and Affiliations
Bibliographic Information
Book Title: Metal-Dielectric Interfaces in Gigascale Electronics
Book Subtitle: Thermal and Electrical Stability
Authors: Ming He, Toh-Ming Lu
Series Title: Springer Series in Materials Science
DOI: https://doi.org/10.1007/978-1-4614-1812-2
Publisher: Springer New York, NY
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer Science+Business Media, LLC 2012
Hardcover ISBN: 978-1-4614-1811-5Published: 01 December 2011
Softcover ISBN: 978-1-4939-4308-1Published: 23 August 2016
eBook ISBN: 978-1-4614-1812-2Published: 02 February 2012
Series ISSN: 0933-033X
Series E-ISSN: 2196-2812
Edition Number: 1
Number of Pages: XI, 149
Topics: Electronics and Microelectronics, Instrumentation, Optical and Electronic Materials, Surface and Interface Science, Thin Films, Nanotechnology and Microengineering, Electrochemistry, Engineering Thermodynamics, Heat and Mass Transfer