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Neutron-Transmutation-Doped Silicon

Editors: Guldberg, Jens (Ed.)

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About this book

This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe­ rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Table of contents (33 chapters)

Table of contents (33 chapters)
  • Neutron-Doped Silicon — A Market Review

    Pages 1-17

    Herzer, Heinz

  • Large Scale Production of NTD Silicon in the United States

    Pages 19-33

    Stone, Bobbie D.

  • Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance

    Pages 35-54

    Corelli, John C. (et al.)

  • Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped Silicon

    Pages 55-82

    Cleland, J. W. (et al.)

  • Impurity Interactions with Structural Defects in Irradiated Silicon

    Pages 83-99

    Newman, R. C.

Buy this book

eBook $119.00
price for USA in USD (gross)
  • ISBN 978-1-4613-3261-9
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Softcover $159.99
price for USA in USD
  • ISBN 978-1-4613-3263-3
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Neutron-Transmutation-Doped Silicon
Editors
  • Jens Guldberg
Copyright
1981
Publisher
Springer US
Copyright Holder
Plenum Press, New York
eBook ISBN
978-1-4613-3261-9
DOI
10.1007/978-1-4613-3261-9
Softcover ISBN
978-1-4613-3263-3
Edition Number
1
Number of Pages
XII, 506
Number of Illustrations
84 b/w illustrations
Topics