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Neutron-Transmutation-Doped Silicon

  • Book
  • © 1981

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Editors:
  1. Jens Guldberg

    1. Topsil A/S, Frederikssund, Denmark

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Table of contents (33 chapters)

  1. Front Matter

    Pages i-xi
    Download chapter PDF

  2. General Subjects

    1. Neutron-Doped Silicon — A Market Review

      • Heinz Herzer
      Pages 1-17

    2. Large Scale Production of NTD Silicon in the United States

      • Bobbie D. Stone
      Pages 19-33

  3. Radiation Defects

    1. Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance

      • John C. Corelli, James W. Corbett
      Pages 35-54

    2. Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped Silicon

      • J. W. Cleland, N. Fukuoka
      Pages 55-82

    3. Impurity Interactions with Structural Defects in Irradiated Silicon

      • R. C. Newman
      Pages 83-99

    4. Defect Production During Neutron Doping of Si

      • J. M. Meese, M. Chandrasekhar, D. L. Cowan, S. L. Chang, H. Yousif, H. R. Chandrasekhar et al.
      Pages 101-140

    5. Wafer Stability. A Comparison of NTD-Silicon with Conventional FZ

      • O. Malmros, J. Guldberg, K. Lund
      Pages 141-150

    6. Electron Spin Resonance (ESR) Study on the Thermal Annealing of Defects Induced in Neutron Transmutation Doped Silicon

      • V. Q. Ho, T. Sugano
      Pages 151-159

    7. Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Silicon

      • Noboru Fukuoka, John W. Cleland
      Pages 161-163

    8. A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in Semiconductors

      • M. A. Kirk, R. C. Birtcher, T. L. Scott, T. H. Blewitt
      Pages 165-165

    9. Defects in Neutron-Irradiated Extrinsic P-Type Silicon

      • M. H. Young, O. M. Stafsudd, K. L. Brower, O. J. Marsh, R. Baron
      Pages 167-181

  4. Irradiation Technology

    1. The Health and Safety Aspects of Neutron Doped Silicon

      • T. G. G. Smith
      Pages 183-191

    2. Precision and Accuracy of NTD Silicon Production Based on Calorimetric Neutron Dose Control

      • K. Heydorn, Kirsten Andresen
      Pages 193-205

    3. The Selection of Starting Material for Neutron-Transmutation Doped Silicon

      • Horst G. Kramer
      Pages 207-210

    4. The Optimisation of Nuclear Parameters Used for Silicon Irradiation in the Harwell Research Reactors

      • N. W. Crick
      Pages 211-221

    5. Factors Affecting Phosphorus Production Rate in NTD Silicon

      • J. M. Meese, S. L. Gunn
      Pages 223-246

    6. Neutron Doped Silicon in Grenoble Reactor Facilities

      • P. Sciers, J. F. Veyrat
      Pages 247-261

    7. Characterization of NTD Silicon Irradiated in Grenoble Reactor Facilities

      • D. Roche, F. Blanc, M. Vilain
      Pages 263-271

    8. A Preliminary Study on NTD-Silicon

      • Lu Cuengang, Li Yaoxin
      Pages 273-286
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Keywords

About this book

This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe­ rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Editors and Affiliations

  • Topsil A/S, Frederikssund, Denmark

    Jens Guldberg

Bibliographic Information

  • Book Title: Neutron-Transmutation-Doped Silicon

  • Editors: Jens Guldberg

  • DOI: https://doi.org/10.1007/978-1-4613-3261-9

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Plenum Press, New York 1981

  • Softcover ISBN: 978-1-4613-3263-3Published: 01 November 2011

  • eBook ISBN: 978-1-4613-3261-9Published: 11 November 2013

  • Edition Number: 1

  • Number of Pages: XII, 506

  • Number of Illustrations: 84 b/w illustrations

  • Topics: Electrical Engineering

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