Evaluation of Advanced Semiconductor Materials by Electron Microscopy

1. Front Matter

   Pages i-xi

   PDF

2. High Resolution Electron Microscopy

   1. HREM of Edge-on Interfaces and Defects

      • Rob W. Glaisher, J. C. Barry, David J. Smith

      Pages 1-17

   2. Image Processing Applied to HRTEM Images of Interfaces

      • A. F. de Jong

      Pages 19-31

   3. II-VI Semiconductor Interfaces

      • G. Feuillet

      Pages 33-45

   4. High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayers

      • C. D’Anterroches, J. M. Gerard, J. Y. Marzin

      Pages 47-58

3. Convergent Beam Electron Diffraction

   1. Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconductors

      • D. Cherns

      Pages 59-74

   2. HOLZ Diffraction from Semiconductor Superlattices

      • H. Gong, C. D. de Haan, F. W. Schapink

      Pages 75-86

   3. Determination of Composition and Ionicity by Critical Voltage and Other Electron Diffraction Methods

      • J. Gjønnes, H. Matsuhata, K. Gjønnes

      Pages 87-99

   4. Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrosymmetric Semiconductors

      • J. C. H. Spence, J. M. Zuo, R. Hoier

      Pages 101-110

4. X-ray and Electron Energy Loss Microanalysis

   1. EDX and EELS Studies of Segregation in STEM

      • J. M. Titchmarsh, I. A. Vatter

      Pages 111-126

5. Cathodoluminescence and Electron Beam Induced Conductivity

   1. TEM-Cathodoluminescence Study of Single and Multiple Quantum Wells of MBE Grown GaAs/AlGaAs

      • J. W. Steeds, S. J. Bailey, J. N. Wang, C. W. Tu

      Pages 127-141

   2. EBIC Studies of Individual Defects in Lightly Doped Semiconductors: CdTe as an Example

      • B. Sieber

      Pages 143-157

6. Schottky Barriers

   1. Electronic Structure and Fermi Level Pinning Obtained with Spatially Resolved Electron Energy Loss Scattering

      • P. E. Batson

      Pages 159-165

   2. Epitaxial NiSi2 and CoSi2 Interfaces

      • R. T. Tung, A. F. J. Levi, F. Schrey, M. Anzlowar

      Pages 167-181

7. Further Analysis of Interfaces

   1. The Fresnel Method for the Characterisation of Interfaces

      • W. M. Stobbs, F. M. Ross

      Pages 183-202

   2. Strains and Misfit Dislocations at Interfaces

      • C. J. Humphreys, D. J. Eaglesham, D. M. Maher, H. L. Fraser, I. Salisbury

      Pages 203-216

8. Ordering/decomposition/analysis of local strains

   1. TEM and STEM Observations of Composition Variations in III-V Semiconductors

      • Frank Glas

      Pages 217-232

   2. Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering in Group III-V Compound Semiconductor Alloys

      • Andrew G. Norman

      Pages 233-253

   3. Elastic Relaxation and TEM Image Contrasts in Thin Composition-Modulated Semiconductor Crystals

      • Michael M. J. Treacy

      Pages 255-266

9. Surface Microscopy and Diffraction

   1. Surface and Thin Film Growth Studied by Reflection High Energy Electron Diffraction

      • P. J. Dobson

      Pages 267-282

The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop­ ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work­ shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.

• crystal
• electron
• electron microscope
• microscopy
• scattering
• segregation
• semiconductor
• transmission electron microscopy

From Book News, Inc.
These proceedings comprise papers reviewing technical progress as well as applications in the areas of: electron microscopy; electron diffraction; energy loss microanalysis; cathodoluminescence; Schottky Barriers; interfaces; analysis of local strains; surface microscopy; and defects in heteroepitaxy.
Annotation copyright Book News, Inc. Portland, Or.

• University of Bristol, Bristol, UK

  David Cherns

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