Nato Science Series II:

Defects in HIgh-k Gate Dielectric Stacks

Nano-Electronic Semiconductor Devices

Editors: Gusev, Evgeni (Ed.)

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About this book

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Table of contents (38 chapters)

Table of contents (38 chapters)
  • PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT

    Pages 1-15

    NIWA, MASAAKI (et al.)

  • EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS

    Pages 17-28

    KLOOTWIJK, JOHAN (et al.)

  • TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS

    Pages 29-40

    MAJHI, P. (et al.)

  • ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS

    Pages 41-59

    BUCHANAN, D.A. (et al.)

  • INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS

    Pages 61-72

    MA, T.P. (et al.)

Buy this book

eBook $199.00
price for USA in USD (gross)
  • ISBN 978-1-4020-4367-3
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $289.00
price for USA in USD
  • ISBN 978-1-4020-4365-9
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $259.00
price for USA in USD
  • ISBN 978-1-4020-4366-6
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Defects in HIgh-k Gate Dielectric Stacks
Book Subtitle
Nano-Electronic Semiconductor Devices
Editors
  • Evgeni Gusev
Series Title
Nato Science Series II:
Series Volume
220
Copyright
2006
Publisher
Springer Netherlands
Copyright Holder
Springer Science+Business Media B.V.
eBook ISBN
978-1-4020-4367-3
DOI
10.1007/1-4020-4367-8
Hardcover ISBN
978-1-4020-4365-9
Softcover ISBN
978-1-4020-4366-6
Series ISSN
1568-2609
Edition Number
1
Number of Pages
XI, 492
Topics