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Nato Science Partnership Subseries: 3

Early Stages of Oxygen Precipitation in Silicon

Editors: Jones, R. (Ed.)

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About this book

It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor­ mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma­ terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra­ red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

Table of contents (43 chapters)

Table of contents (43 chapters)
  • Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment

    Pages 1-18

    Watkins, G. D.

  • The Initial Stages of Oxygen Aggregation in Silicon: Dimers, Hydrogen and Self-Interstitials

    Pages 19-39

    Newman, R. C.

  • Infrared Studies of the Early Stages of Oxygen Clustering in Silicon

    Pages 41-60

    Lindström, J. L. (et al.)

  • Magnetic Resonance Investigations of Thermal Donors in Silicon

    Pages 61-82

    Ammerlaan, C. A. J. (et al.)

  • Magnetic Resonance of Heat Treatment Centres in Silicon

    Pages 83-101

    Spaeth, J. M.

Buy this book

eBook $59.99
price for USA in USD (gross)
  • ISBN 978-94-009-0355-5
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $99.00
price for USA in USD
  • ISBN 978-0-7923-4296-0
  • Free shipping for individuals worldwide
  • This title is currently reprinting. You can pre-order your copy now.
Softcover $79.99
price for USA in USD
  • ISBN 978-94-010-6645-7
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Early Stages of Oxygen Precipitation in Silicon
Editors
  • R. Jones
Series Title
Nato Science Partnership Subseries: 3
Series Volume
17
Copyright
1996
Publisher
Springer Netherlands
Copyright Holder
Kluwer Academic Publishers
eBook ISBN
978-94-009-0355-5
DOI
10.1007/978-94-009-0355-5
Hardcover ISBN
978-0-7923-4296-0
Softcover ISBN
978-94-010-6645-7
Series ISSN
1388-6576
Edition Number
1
Number of Pages
552
Topics