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Early Stages of Oxygen Precipitation in Silicon

  • Book
  • © 1996

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Editors:
  1. R. Jones

    1. Department of Physics, University of Exeter, Exeter, UK

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Part of the book series: NATO Science Partnership Subseries: 3 (ASHT, volume 17)

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Table of contents (43 chapters)

  1. Front Matter

    Pages i-xviii
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  2. Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment

    • G. D. Watkins
    Pages 1-18

  3. The Initial Stages of Oxygen Aggregation in Silicon: Dimers, Hydrogen and Self-Interstitials

    • R. C. Newman
    Pages 19-39

  4. Infrared Studies of the Early Stages of Oxygen Clustering in Silicon

    • J. L. Lindström, T. Hallberg
    Pages 41-60

  5. Magnetic Resonance Investigations of Thermal Donors in Silicon

    • C. A. J. Ammerlaan, I. S. Zevenbergen, Yu. V. Martynov, T. Gregorkiewicz
    Pages 61-82

  6. Magnetic Resonance of Heat Treatment Centres in Silicon

    • J. M. Spaeth
    Pages 83-101

  7. Effect of Hydrogen on Oxygen-Related Defect Reactions in Silicon at Elevated Temperatures

    • V. P. Markevich, I. F. Medvedeva, L. I. Murin
    Pages 103-122

  8. Passivation of Thermal Donors by Atomic Hydrogen

    • Jörg Weber, Dirk I Bohne
    Pages 123-140

  9. Oxygen-Carbon, Oxygen-Nitrogen and Oxygen-Dimer Defects in Silicon

    • C. P. Ewels, R. Jones, S. Öberg
    Pages 141-162

  10. The Role of Trivalent Oxygen in Electrically Active Complexes

    • Peter Deák
    Pages 163-177

  11. Hydrogen - Oxygen Interactions in Silicon

    • Stefan K. Estreicher, Young K. Park, Peter A. Fedders
    Pages 179-195

  12. Oxygen Diffusion in Silicon: The Influence of Hydrogen

    • M. Ramamoorthy, S. T. Pantelides
    Pages 197-205

  13. Generation of Thermal Donors, Nitrogen-Oxygen Complexes and Hydrogen-Oxygen Complexes in Silicon

    • M. Suezawa
    Pages 207-221

  14. The Electronic Structure of the Oxygen Donor in Silicon from Piezospectroscopy

    • Michael Stavola
    Pages 223-242

  15. Low-Temperature Diffusion and Agglomeration of Oxygen in Silicon

    • U. Gösele, E. Schroer, P. Werner, T. Y. Tan
    Pages 243-261

  16. Roles of Structural Defects and Contaminants in Oxygen Precipitation in Silicon

    • K. Sumino
    Pages 263-282

  17. Various Forms of Isolated Oxygen in Semiconductors

    • B. Pajot
    Pages 283-302

  18. Oxygen-Related Luminescence Centres Created in Czochralski Silicon

    • E. C. Lightowlers, Gordon Davies
    Pages 303-318

  19. The Nitrogen-Pair Oxygen Defect in Silicon

    • F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro et al.
    Pages 319-327

  20. Thermal Double Donors in Silicon: A New Insight into the Problem

    • L. I. Murin, V. P. Markevich
    Pages 329-336
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About this book

It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor­ mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma­ terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra­ red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

Editors and Affiliations

  • Department of Physics, University of Exeter, Exeter, UK

    R. Jones

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