Nato Science Series E:

Semiconductor Interfaces at the Sub-Nanometer Scale

Editors: Salemink, H.W.M, Pashley, Michael (Eds.)

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About this book

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Table of contents (25 chapters)

Table of contents (25 chapters)
  • Surface Atomic Processes during Epitaxial Growth

    Pages 1-10

    Horikoshi, Y. (et al.)

  • Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors

    Pages 11-24

    Suzuki, T. (et al.)

  • Surface Chemistry in the Si/Ge GSMBE system studied using RHEED

    Pages 25-33

    Mokler, Scott M.

  • Diffusion of Si in δ-Doped GaAs Studied by Magneto Transport

    Pages 35-43

    Koenraad, P. M. (et al.)

  • Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status

    Pages 45-55

    Vvedensky, Dimitri D.

Buy this book

eBook $169.00
price for USA in USD (gross)
  • ISBN 978-94-011-2034-0
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $299.00
price for USA in USD
  • ISBN 978-0-7923-2397-6
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $219.99
price for USA in USD
  • ISBN 978-94-010-4900-9
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Semiconductor Interfaces at the Sub-Nanometer Scale
Editors
  • H.W.M Salemink
  • Michael Pashley
Series Title
Nato Science Series E:
Series Volume
243
Copyright
1993
Publisher
Springer Netherlands
Copyright Holder
Kluwer Academic Publishers
eBook ISBN
978-94-011-2034-0
DOI
10.1007/978-94-011-2034-0
Hardcover ISBN
978-0-7923-2397-6
Softcover ISBN
978-94-010-4900-9
Series ISSN
0168-132X
Edition Number
1
Number of Pages
XI, 256
Topics