The Springer International Series in Engineering and Computer Science

Matching Properties of Deep Sub-Micron MOS Transistors

Authors: Croon, Jeroen A., Sansen, Willy M. C., Maes, Herman E.

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About this book

Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:

A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.

The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.

The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance.

The impact of process parameters on the matching properties is discussed.

The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor.

Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Table of contents (7 chapters)

Table of contents (7 chapters)
  • Introduction

    Pages 1-11

  • Measurement and Modeling of Mismatch in the Drain Current

    Pages 13-46

  • Parameter Extraction

    Pages 47-72

  • Physical Origins of Mosfet Mismatch

    Pages 73-128

  • Technological Aspects

    Pages 129-151

Buy this book

eBook $119.00
price for USA in USD (gross)
  • ISBN 978-0-387-24313-9
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $219.99
price for USA in USD
  • ISBN 978-0-387-24314-6
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $159.99
price for USA in USD
  • ISBN 978-1-4419-3718-6
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Matching Properties of Deep Sub-Micron MOS Transistors
Authors
Series Title
The Springer International Series in Engineering and Computer Science
Series Volume
851
Copyright
2005
Publisher
Springer US
Copyright Holder
Springer-Verlag US
eBook ISBN
978-0-387-24313-9
DOI
10.1007/b105122
Hardcover ISBN
978-0-387-24314-6
Softcover ISBN
978-1-4419-3718-6
Series ISSN
0893-3405
Edition Number
1
Number of Pages
XII, 206
Topics