About this book series
As Moore's law approaches its physical limit, research results beyond Moore's law based on novel materials, structures and devices is providing a new development direction for the semiconductor industry. GaN, SiC and other wide bandgap semiconductor materials are the third generation of semiconductor materials, following silicon, germanium, GaAs and InP. They are the preferred materials for manufacturing solid-state light sources, power electronic devices, and microwave RF devices due to their superior frequency, efficiency, voltage resistance, temperature resistance, and radiation resistance. The study of new materials can meet national strategic requirements for energy conservation and emission reduction, intelligent manufacturing and information security among others. It has become the forefront of global semiconductor technology research and a new industrial focus, and has a significant impact on industrial growth.
The book series "Wide Bandgap Semiconductors" is dedicated to clarifying the fundamental frontiers, key scientific and technological issues of wide bandgap semiconductors. It provides a comprehensive and prospective discussion of the characteristics of new generation semiconductor materials, fundamental physical properties, device fabrication, international R&D trends, key scientific and technological problems encountered, major R&D results achieved, device applications, and development prospects. This series represents the latest findings in fundamental semiconductor theory research and has significant application value.
The book series "Wide Bandgap Semiconductors" brings together the research experience and achievements of more than twenty of China's leading experts in this field. It is a creative exploration of the "synergy between fundamental and applied disciplines". This series fills a gap in the publication of monographs in this field both domestically and internationally, and can serve as a resource for scientific and technical workers engaged in the research and development of wide bandgap semiconductor electronic materials and devices, as well as for enterprise engineers and technicians seeking to strengthen their fundamental knowledge and investigate the problems encountered in practical scientific research.
- Electronic ISSN
- 2948-2615
- Print ISSN
- 2948-2607
- Editor-in-Chief
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- Yue Hao
- Series Editor
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- Youdou ZHENG,
- Ming Liu,
- Fengyi Jiang,
- Lehui Ma,
- Shijie Xu,
- Shibing Long,
- Yuming Zhang,
- Tongbo Wei
