Skip to main content
Springer Nature Link
Log in

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

  • Book
  • © 2010

Overview

Editors:
  1. Kevin O’Donnell

    1. Department of Physics, University of Strathclyde, Glasgow, UK

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  2. Volkmar Dierolf

    1. Physics Department, Lehigh University, Bethlehem, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  • Provides a snapshot of the field at a critical point in its development
  • Summarises recent progress in the science and technology of rare-earth doped nitrides
  • First book on Rare-earth doped III-Nitrides and semiconductors
  • Includes supplementary material: sn.pub/extras

Part of the book series: Topics in Applied Physics (TAP, volume 124)

This is a preview of subscription content, log in via an institution to check access.

Access this book

Log in via an institution
eBook USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

About this book

This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.

Similar content being viewed by others

Keywords

Table of contents (11 chapters)

  1. Front Matter

    Pages i-xvi
    Download chapter PDF

  2. Theoretical Modelling of Rare Earth Dopants in GaN

    • R. Jones, B. Hourahine
    Pages 1-24

  3. RE Implantation and Annealing of III-Nitrides

    • Katharina Lorenz, Eduardo Alves, Florence Gloux, Pierre Ruterana
    Pages 25-54

  4. Lattice Location of RE Impurities in IIINitrides

    • André Vantomme, Bart De Vries, Ulrich Wahl
    Pages 55-98

  5. Electroluminescent Devices Using RE-Doped III-Nitrides

    • Akihiro Wakahara
    Pages 99-113

  6. Er-Doped GaN and InxGa1-xN for Optical Communications

    • R. Dahal, J. Y. Lin, H. X. Jiang, J. M. Zavada
    Pages 115-157

  7. Rare-Earth-Doped GaN Quantum Dot

    • B. Daudin
    Pages 159-188

  8. Visible Luminescent RE-doped GaN, AlGaN and AlInN

    • Robert Martin
    Pages 189-219

  9. Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride

    • Volkmar Dierolf
    Pages 221-268

  10. Excitation Mechanisms of RE Ions in Semiconductors

    • Alain Braud
    Pages 269-307

  11. High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd

    • O. Brandt, S. Dhar, L. Pérez, V. Sapega
    Pages 309-342

  12. Summary and Prospects for Future Work

    Pages 343-345

  13. Back Matter

    Pages 347-355
    Download chapter PDF
Back to top

Editors and Affiliations

  • Department of Physics, University of Strathclyde, Glasgow, UK

    Kevin O’Donnell

  • Physics Department, Lehigh University, Bethlehem, USA

    Volkmar Dierolf

Bibliographic Information

  • Book Title: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

  • Editors: Kevin O’Donnell, Volkmar Dierolf

  • Series Title: Topics in Applied Physics

  • DOI: https://doi.org/10.1007/978-90-481-2877-8

  • Publisher: Springer Dordrecht

  • eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)

  • Copyright Information: Springer Science+Business Media B.V. 2010

  • Hardcover ISBN: 978-90-481-2876-1Published: 27 July 2010

  • Softcover ISBN: 978-94-017-8472-6Published: 02 November 2014

  • eBook ISBN: 978-90-481-2877-8Published: 28 June 2010

  • Series ISSN: 0303-4216

  • Series E-ISSN: 1437-0859

  • Edition Number: 1

  • Number of Pages: XVI, 355

  • Additional Information: Jointly published with Canopus Academic Publishing Ltd

  • Topics: Optics, Lasers, Photonics, Optical Devices, Optical and Electronic Materials, Quantum Optics

Publish with us

Policies and ethics

Back to top