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Materials - Optical & Electronic Materials | Journal of Electronic Materials (Editorial Board)

Journal of Electronic Materials

Journal of Electronic Materials

Editor-in-Chief: Shadi Shahedipour-Sandvik

ISSN: 0361-5235 (print version)

Journal no. 11664

EDITOR-IN-CHIEF

F. Shadi Shahedipour-Sandvik, SUNY Polytechnic Institute

 SENIOR EDITOR
John D. Baniecki, Fujitsu Laboratories, Japan

SECTION EDITORS

Thomas R. Bieler, Michigan State University
Wojciech Jadwisienczak, Ohio University
Manh-Huong Phan, University of South Florida
Dan Ricinschi, Tokyo Institute of Technology, Japan

EDITORIAL OVERSIGHT COMMITTEE

C-P. Chang
Applied Materials, Inc.

Q. Jia
State University of New York at Buffalo

K. Jones
U.S. Army Research Laboratory

S. Mohney
The Pennsylvania State University

S. Nikzad
NASA Jet Propulsion Laboratory

ASSOCIATE EDITORS

III-V and II-VI Semiconductor Materials
John E. Ayers
University of Connecticut, Storrs, CT

II-V As and Sb based Materials and Devices
Ganesh Balakrishnan, University of New Mexico, Albuquerque, NM

Crystal Growth
Ishwara Bhat, Rensselaer Polytechnic Institute

II-VI Materials and Electronic Devices, Crystallography and Defects
Gregory Brill, Army Research Laboratory, Adelphi, MD

Interfaces and Contacts
L.J. Brillson, The Ohio State University

Micromechanics
Arief S. Budiman, Singapore University of Technology and Design, Singapore

SiC, Plasmonics, Metamaterials, Phonon Polaritons, and Emitters
Joshua Caldwell, Vanderbilt University, Nashvhille, TN

Oxide and Semiconductor Device Modeling and Simulation, Optoelectronic IC,  Flexible Electronic and Photonic
Parathasarathi Chakrabarti, Indian Institute of Technology, BHU, Varanasi, India

Packaging and Interconnects
Sinn-wen Chen, National Tsing Hua University

Photocatalysis, Thin Film Batteries
Tai Cheuk-Wai, Arrhenius Laboratory, Stockholm University, Stockholm, Sweden

Thermal Management and Composite Materials
Deborah Chung, University at Buffalo, SUNY

Interconnects and Nanocharacterization
Kathleen Dunn, SUNY Polytechnic Institute

Materials Integration
Kurt G. Eyink, Air Force Research Laboratory

Processing and Physical Properties of Electronic Ceramics
Tsang-Tse Fang, National Cheng Kung University, Tainan City, Taiwan

Thermoelectric Materials and Devices, Perovskites, Energy Harvesting Systems
Armin Feldhoff, Institute of Physical Chemistry and Electrochemistry, Hannover, Germany

Packaging and Interconnects
Darrel Frear, Freescale Semiconductor

Nanostructures
Zhiyong Gu, University of Massachusetts Lowell, Lowell, MA

Organic Electronics, Optical Spectroscopy
Suchi Guha, University of Missouri, Columbia, MO

Crystallography and Inorganic Materials
Tsuyoshi Kajitani, Tohoku University

Structure-Property Relationships of Defects and Interfaces
Robert F. Klie, University of Illinois, Chicago, IL

MEMS/NEMS for Sensing Applications, 2D Materials
Goutam Koley,  Clemson University, Clemson, SC

Phase Change Memory, Photonic and Optoelectronic
Pei-Cheng Ku, University of Michigan, Ann Arbor, MI

Nano Materials; Opto/Electronic and Photonics
Ching-Ting Lee, National Cheng Kung University, Tainan City, Taiwan
  
Interfaces, Printed Electronics, and Atomistic Simulation
Hyuck Mo Lee, Korea Advanced Institute of Science and Technology

Packaging and Interconnects
Tae-Kyu Lee, Cisco Systems

Photovoltaics, Nuclear and THZ Detectors, and Chalcogenides
Krishna Mandal, University of South Carolina, Columbia, SC

Solar Energy Materials, Solar Cells, and Photovoltaics
Arturo Morales-Acevedo, CINVESTAV-IPN, México, D. F., México

Sensors, Microstructural Evolution and Packaging
Govindarajan Muralidharan, Oak Ridge National Laboratory, Oak Ridge, TN

Nanostructured and Nanocomposite Materials, Novel Sensors
Paul R. Ohodnicki, National Energy Technology Laboratory, Pittsburgh, PA

Compound Semiconductor and Oxide-Based Materials and Devices
Jamie Phillips, University of Michigan, Ann Arbor, MI

Thin Films and Devices
Manuel Quevedo-Lopez, University of Texas at Dallas

Microwave Properties of Dielectrics and Antennas, Dielecric Resonators
M.T. Sebastian, University of Oulu, Oulu, Finland
  
Silicon-Based Heterostructures
Michael Tischler, Ocis Technology LLC

III-V and II-VI Optoelectronic Devices
Jens W. Tomm, Max-Born-Institute, Berlin, Germany

Optoelectronics and Quantum Dots
Jian Xu, Pennsylvania State University, University Park, PA

Theoretical and Computational Physics and Chemistry, Electronic Materials for Energy Including Electrochemical and Photo-Catalytic Applications
Rui-Qin Zhang, City University of Hong-Kong, Kowloon, Hong Kong SAR

Piezoelectrics
Shujun Zhang, The Pennsylvania State University, University Park, PA

2D Materials and Devices, Electrochemical and Photo-Catalytic Applications
Yuebing Zheng, University of Texas-Austin, Austin TX

Crystalline and Amorphous Oxide Semiconductors and Devices, Combinatorial Material Science 
Holger von Weckstern, Universität Leipzig, Leipzig, Germany

Nanomaterials, Bioelectronics, and Biosensors
Yuhei Hayamizu, Tokyo Institute of Technology, Tokyo, Japan

Electronic and Ionic Transport in Nonionic Materials
Doo Seok Jeong, Korea Institute of Science and Technology, Seoul, South Korea

Metals and Metallic Oxides for Electrochemical Energy Conversion
Quentin Van Overmeere, Palo Alto Research Center (PARC, A Xerox Company), Palo Alto, CA

 

For authors and editors


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  • Aims and Scope

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    The Journal of Electronic Materials reports on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, insulators, and optical and display materials. It strives to publish papers of interest to both non-specialists and specialists in the electronic materials field.

    The journal contains technical papers detailing critical new developments in the electronics field, as well as invited and contributed review papers on topics of current interest.

    There are four types of papers published in JEM:

    • Regular issue papers deal with new and original work
    • Letters are research papers
    • Reviews are lengthy papers that cover a certain area of research
    • Special Issue papers are so designated when ten or more papers on new and original research on the same topic are presented in the same issue; special section papers include six to nine papers concerned with research on the same topic.

    The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.

    All submissions to the Journal of Electronic Materials must be within its scope, and advance scientific knowledge by addressing important questions relevant for the research of electronic materials.  Specifically, the report should make substantial advancement in understanding properties of electronic materials and closely related disciplines. It is equally important that any submission should adhere to the highest principles of scientific ethics.

    Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also publishes select papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. The journal benefits both specialists and non-specialists in the electronic materials field. 

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