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Materials - Optical & Electronic Materials | Journal of Materials Science: Materials in Electronics - incl. option to publish open access (Editorial Board)

Journal of Materials Science: Materials in Electronics

Journal of Materials Science: Materials in Electronics

Editor-in-Chief: Safa O. Kasap

ISSN: 0957-4522 (print version)
ISSN: 1573-482X (electronic version)

Journal no. 10854

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Safa Kasap
University of Saskatchewan, Canada

Founding Editor and Former Editor-in-Chief:

Arthur F. W. Willoughby
Southampton University, UK

Deputy Editor-in-Chief:

Patrick J. McNally
Dublin City University, Ireland


Peter Capper
Selex ES, UK

I.M. Dharmadasa
Sheffield Hallam University, UK

Chris Groves
Durham University, UK

C. Robert Kao
National Taiwan University, Taiwan

Jun Luo
Chinese Academy of Sciences, China

Maurizio Martino
Università del Salento, Italy

Hiroshi Nishikawa
Osaka University, Japan

Amlan J. Pal
Indian Association for the Cultivation of Science, India

Dong-Liang Peng
Xiamen University, China

Henry Radamson
Royal Institute of Technology, Sweden

Karthik Shankar
University of Alberta, Canada

Velumani Subramaniam

Stephen Sweeney
University of Surrey, UK

Wu Yan
China University of Geosciences (Wuhan), China

Fu Rong Zhu
Hong Kong Baptist University, Hong Kong

Assistant Editor:

Chunzi Zhang
University of Saskatchewan, Canada

Editorial Board:

Christopher Gourlay, Imperial College London, UK; Chien-Neng Liao, National Tsing Hua University, Taiwan; Adithya Prakas, Intersil, USA; Sadao Adachi, Gunma University, Japan; Hajime Asahi, Osaka University, Japan; Ben Ruck, Victoria University of Wellingon, New Zealand; Rana Biswas, Ames Laboratory & Iowa State University, USA; Chennupati Jagadis, The Australian National University, Australia; W. (Jim) Choyke, University of Pittsburgh, USA; Dan Allwood, University of Sheffield, UK; Darrel Frear, Freescale Semiconductor, USA; David Bloor, Durham University, UK; David Jiles, Iowa State University, USA; Dan Hewak, University of Southampton, UK; Y.C. (Archie) Chan, City University of Hong Kong, China; Antonin Fejfa, Academy of Sciences of the Czech Republic; Shubhra Gangopadhyay, University of Missouri-Columbia, USA; Hadis Morkoc, Virginia Commonwealth University, USA; Robert Hull, Rensselaer Polytechnic University, USA; Jan Evans-Freeman, University of Canterbury, New Zealand; Jong Heo, Pohang University of Science and Technology, Korea; Karen Kavanagh, Simon Fraser University, Canada; Kunji Chen, Nanjing University, China; Kristin M. Poduska, Memorial University of Newfoundland, Canada; Leszek Malkinski, University of New Orleans, USA; Nandu Chaure, Savitribai Phule Pune University, India; Hiroyoshi Naito, Osaka Prefecture University, Japan; Neil White, University of Southampton, UK; Habib Pathan, Savitribai Phule Pune University, India; Rene van Swaaij, Delft University of Technology, The Netherlands; Robert Wallace, University of Texas at Dallas, USA; Harry Ruda, University of Toronto, Toronto; Stuart J. C. Irvine, Swansea University, UKEphraim Suhir, Portland State University, USA; Katsuhisa Tanaka, Kyoto University, Japan; Takashi Uchino, Kobe University, Japan; Yashowanta Mohapatra, Indian Institute of Technology Kanpur, India; Chunzi Zhang, University of Saskatchewan, Canada; Alex (Ya Sha) Yi, University of Michigan, USA; Takayuki Yanagida, Nara Institute of Science and Technology, Japan

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    Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics covering the ground between the fundamental science, such as semiconductor physics, and work concerned solely with applications. It features not only the growth and preparation of new materials, but also their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterisation related to the whole range of applications in electronics. The Journal encourages papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials. New preparation methods such as molecular beam epitaxy, MOMBE, chemical vapour deposition techniques and bulk crystal growth are covered, while all aspects of the technology and fabrication of semiconductor devices and circuits, together with their assessment and reliability, are included. Papers on materials used in more conventional applications such as resistors, inductors, conductors, capacitors, power semiconductor devices, dielectrics, ferroelectrics, insulators and magnetic applications are equally encouraged.
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