Emerging Non-volatile Memory Technologies

1. Front Matter

   Pages i-viii

   PDF

2. Spintronic-based Devices

   1. Front Matter

      Pages 1-1

      PDF

   2. Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions

      • P. K. Muduli, Raghav Sharma, Dhananjay Tiwari, Naveen Sisodia, Afshin Houshang, O. G. Heinonen et al.

      Pages 3-44

   3. Spin Transfer Torque Magnetoresistive Random Access Memory

      • Wai Cheung Law, Shawn De Wei Wong

      Pages 45-102

   4. Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications

      • Sachin Krishnia, Wen Siang Lew

      Pages 103-147

   5. Electric-Field-Controlled MRAM: Physics and Applications

      • James Lourembam, Jiancheng Huang

      Pages 149-173

   6. Chiral Magnetic Domain Wall and Skyrmion Memory Devices

      • Kyujoon Lee, Dong-Soo Han, Mathias Kläui

      Pages 175-201

   7. Circuit Design for Non-volatile Magnetic Memory

      • Tony Tae-Hyoung Kim

      Pages 203-224

   8. Domain Wall Programmable Magnetic Logic

      • Sarjoosing Goolaup, Chandrasekhar Murapaka, Wen Siang Lew

      Pages 225-258

   9. 3D Nanomagnetic Logic

      • Markus Becherer

      Pages 259-296

   10. Spintronics for Neuromorphic Engineering

       • Gerard Joseph Lim, Calvin Ching Ian Ang, Wen Siang Lew

       Pages 297-315

3. Resistive Random-Access Memory

   1. Front Matter

      Pages 317-317

      PDF

   2. Resistive Random Access Memory Device Physics and Array Architectures

      • Victor Yiqian Zhuo, Zhixian Chen, King Jien Chui

      Pages 319-343

   3. RRAM Device Characterizations and Modelling

      • Peng Huang, Bin Gao, Jinfeng Kang

      Pages 345-381

   4. RRAM-Based Neuromorphic Computing Systems

      • Putu Andhita Dananjaya, Roshan Gopalakrishnan, Wen Siang Lew

      Pages 383-414

   5. An Automatic Sound Classification Framework with Non-volatile Memory

      • Jibin Wu, Yansong Chua, Malu Zhang, Haizhou Li, Kay Chen Tan

      Pages 415-438

4. Correction to: Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions

   • P. K. Muduli, Raghav Sharma, Dhananjay Tiwari, Naveen Sisodia, Afshin Houshang, O. G. Heinonen et al.

   Pages C1-C1

This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

• Domain Wall Devices
• Logic-in-Memory Architecture
• Magnetic Memory and Logic
• Nanospintronics
• Nanostructured magnetism
• Non-Volatile Logic Circuits
• Perpendicular Magnetic Anisotropy
• Perpendicular magnetic anisotropy
• STT-MRAM
• STT-RAM
• Spin Transfer Torque devices
• Spin-transfer torque

• School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

  Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya

Dr. Lew is a full-time academic staff (Assistant Professor) at the School of Physical and Mathematical Sciences (Physics Division), Nanyang Technological University, Singapore. He received his PhD degree from the University of Cambridge, UK. Dr Lew has been working on magnetism and magnetic materials research for more than ten years in industrial and research laboratories. Prior to joining NTU, he worked as Research Associate at the Cavendish Laboratory. Dr Lew’s research team specializes on spin-electronics or “spintronics” devices: thin film sensor growth, micro- and nano-fabrication, device transport measurement, and micromagnetic modeling.

Prof. Teruo Ono is a full professor at the Institute of Chemical Research, Kyoto University, Japan.  He received his D.Sc from Kyoto University, Japan in 1996. Since then he worked at Keio University and Osaka University. In 2004, he joined Kyoto University as a full professor and established the Nanospintronics group where he has been leading the research in the field of spinelectronics.  His current research is focused on magnetic materials, spintronics and nanofabrication. He was the recipient of multiple awards; namely Japan IBM Science Award, the Sir Martin Wood prize. He has more than 200 papers in peer-reviewed scientific journals including Science, Nature, Nature Materials and Physical Review Letters.

Dr. Sarjoosing Goolaup is a Senior Research Fellow in the Division of Physics and Applied Physics at the Nanyang Technological University, Singapore.  He received his PhD degree in Electrical Engineering from the National University of Singapore in 2008.  He was the recipient of the Singapore Millennium Foundation Post-Doctoral Fellowship.  Dr Goolaup research focus is on spin transport in magnetic nanostructures, spin logic and magnetic materials.  Dr Goolaup has published over 40 papers in peer-reviewed scientific journals.

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