Noise in Nanoscale Semiconductor Devices

1. Front Matter

   Pages i-vi

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2. Origins of 1/f Noise in Electronic Materials and Devices: A Historical Perspective

   • D. M. Fleetwood

   Pages 1-31

3. Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

   • Christoforos Theodorou, Gérard Ghibaudo

   Pages 33-85

4. Noise in Resistive Random Access Memory Devices

   • F. M. Puglisi

   Pages 87-133

5. Systematic Characterization of Random Telegraph Noise and Its Dependence with Magnetic Fields in MOSFET Devices

   • Carlos Marquez, Oscar Huerta, Adrian I. Tec-Chim, Fernando Guarin, Edmundo A. Gutierrez-D, Francisco Gamiz

   Pages 135-174

6. Principles and Applications of I_g-RTN in Nano-scaled MOSFET

   • Steve S. Chung, E. R. Hsieh

   Pages 175-200

7. Random Telegraph Noise in Flash Memories

   • Alessandro S. Spinelli, Christian Monzio Compagnoni, Andrea L. Lacaita

   Pages 201-227

8. Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals

   • Bernhard Stampfer, Alexander Grill, Michael Waltl

   Pages 229-257

9. Measurement and Simulation Methods for Assessing SRAM Reliability Against Random Telegraph Noise

   • Kiyoshi Takeuchi

   Pages 259-284

10. Random Telegraph Noise Under Switching Operation

    • Kazutoshi Kobayashi, Mahfuzul Islam, Takashi Matsumoto, Ryo Kishida

    Pages 285-333

11. Low-Frequency Noise in III–V, Ge, and 2D Transistors

    • Mengwei Si, Xuefei Li, Wangran Wu, Sami Alghamdi, Peide Ye

    Pages 335-357

12. Detection and Characterization of Single Defects in MOSFETs

    • Toshiaki Tsuchiya

    Pages 359-415

13. Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques

    • Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean Joseph O’Shea, Kin Leong Pey

    Pages 417-440

14. RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devices: A Simulation Study

    • F. Adamu-Lema, C. Monzio Compagnoni, O. Badami, V. Georgiev, A. Asenov

    Pages 441-466

15. Advanced Characterization and Analysis of Random Telegraph Noise in CMOS Devices

    • J. Martin-Martinez, R. Rodriguez, M. Nafria

    Pages 467-493

16. An Overview on Statistical Modeling of Random Telegraph Noise in the Frequency Domain

    • Thiago H. Both, Maurício Banaszeski da Silva, Gilson I. Wirth, Hans P. Tuinhout, Adrie Zegers-van Duijnhoven, Jeroen A. Croon et al.

    Pages 495-516

17. Defect-Based Compact Modeling of Random Telegraph Noise

    • Pieter Weckx, Ben Kaczer, Marko Simicic, Bertrand Parvais, Dimitri Linten

    Pages 517-552

18. Oxide Trap-Induced RTS in MOSFETs

    • A. S. M. Shamsur Rouf, Zeynep Çelik-Butler

    Pages 553-607

19. Atomistic Modeling of Oxide Defects

    • Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Yannick Wimmer, Michael Waltl, Tibor Grasser

    Pages 609-648

20. The Langevin–Boltzmann Equation for Noise Calculation

    • Christoph Jungemann

    Pages 649-685

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices.  Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models.  Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects.

• Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;
• Enables readers to design more reliable semiconductor devices;
• Offers the most up-to-date information on point defects, based on physical microscopic models.

• Random Telegraph Signals in Semiconductor Devices
• Low-Frequency Noise in Advanced MOS Devices
• Noise in Semiconductor Devices
• Noise Analysis
• Noise Simulation

• Institute for Microelectronics, Technische Universität Wien, Wien, Austria

  Tibor Grasser

Prof. Tibor Grasser is an IEEE Fellow and has been the head of the Institute for Microelectronics since 2016. He has edited various books, e.g. on advanced device modeling (World Scientific), the bias temperature instability (Springer) and hot carrier degradation (Springer), is a distinguished lecturer of the IEEE EDS, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011). He currently serves as an Associate Editor for the IEEE Transactions on Electron Devices following his assignment as Associate Editor for Microelectronics Reliability (Elsevier) and has been involved in various outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW. Prof. Grasser's current research interests include theoretical modeling of performance aspects of 2D and 3D devices (charge trapping, reliability), starting from the ab initio level over more efficient quantum-mechanical descriptions up to TCAD modeling. The models developed in his group have been made available in the most important commercial TCAD environments.

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