Editors

Editors-in-Chief

Bernd Michel
Fraunhofer Micro Materials Center Berlin and Chemnitz,
Technologie-Campus 3,
09126 Chemnitz,Germany
e-mail: office@coinn.de

Bharat Bhushan
Nanoprobe Laboratory for Bio- & Nanotechnology and Biomimetics (NLB2)
The Ohio State University
201 W. 19th Avenue
Columbus, OH 43210-1142, USA
e-mail:bhushan.2@osu.edu

Editorial Board

D. Acharjee, IASTM, Kolkata, India
G.G. Adams, Northeastern University, Boston, MA, USA
W. Benecke, Fraunhofer Institute for Silicon Technology, Itzehoe, Germany
J.Chang, National Tsing Hua University, Hsinchu, Taiwan
N.F. de Rooij, Université de Neuchâtel, Neuchâtel, Switzerland
Hassan Elahi, Univeristy of Rome, Rome, Italy
M. Esashi, Tohoku University, Sendai, Japan
J. Felba, Wroclaw University of Technology, Wroclaw, Poland
T. Fukuda, Nagoya University, Nagoya, Japan
L. Gu, Massachusetts Institute of Technology, Cambridge, MA, USA
G. Harsanyi, Budapest University of Technology and Economics, Budapest, Hungary
R.T. Howe, Stanford University, Stanford, CA, USA
J. Iannacci, Fondazione Bruno Kessler-FBK, Trento, Italy
G. Jang, Hanyang University, Seoul, Korea
Jia-Yang Juang, National Taiwan University, Taipei, Taiwan
W. Kanert, Infineon Technologies AG, Neubiberg, Germany
A. Khosla, Lab 177, Ontario, Canada
K.-D. Lang, Fraunhofer Institute for Reliability and Microintegration IZM, Berlin, Germany
R.A. Lawes, FCGI FIEE FInstP FREng, Micro-Nanotechnology, Oxfordshire, UK
W. G. Lee, Department of Mechanical Engineering, Kyung Hee University, Yongin, Korea
J. Lu, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
J. Mehner, Chemnitz University of Technology, Department of Microsystems and Precision Engineering, Chemnitz, Germany
W. J. Meng, Lousiana State University, Baton Rouge, LA, USA
N. Meyendorf, Fraunhofer IKTS, Dresden und Berlin, Germany
M. Michel, IBM Deutschland Research, Boeblingen, Germany
Th. Otto, Franhofer ENAS Chemnitz, Germany
H.M. Ouakad,Sultan Qaboos University,Muscat, Oman
N.C. Park, Yonsei University, Seoul, Korea
Y. Ping, Jiangsu University, Zhenjiang, 212013, P.R.China
A.P. Pisano, University of California, Berkeley, CA, USA
A.A. Polycarpou, University of Illinois at Urbana-Champaign, Urbana, IL, USA
R. Pufall, Infineon Technologies AG, Munich, Germany
M. Abo Ras, Joint Lab Technische Sicherheit Berlin, Berlin, Germany
K. Sato, Aichi Institute of Technology, Yachigusa, Japan
W.W. Scott, Oracle Recording Head Operations, Louisville, CO, USA
H.M.Sedighi, Shahid Chamran University of Ahvaz, Iran
S. Shen, University of Washington, Seattle, WA, USA
W. Shi, California Institute of Technology - CALTECH, Pasadena, CA, USA
H. Shirangi, Robert Bosch GmbH, Stuttgart, Germany
T. Singh, University of Waterloo, ON, Canada
A.Z. Szeri, University of Delaware, Newark, DE, USA
F. Talke, University of California, San Diego, CA, USA
J. Villain, Fachhochschule Augsburg, Augsburg, Germany
M. Werner, NMTC nano and Micro Technology Consulting, Berlin, Germany
T. Winkler, Berliner Nanotest und Design GmbH, Chemnitz, Germany
B. Wunderle, Fraunhofer ENAS, Berlin, Germany
S. Yu, Tsinghua University, Beijing, China
G. Q. Zhang, Delft University of Technology, 2628 CT Delft, The Netherlands
R. Zichner, Fraunhofer ENAS,Chemnitz, Germany
Yu Zhou, Genus PLC, Waunakee, WI, USA
Jie Zou, The National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA
K. K. Żur, Bialystok University of Technology, Bialystok, Poland