Special issue: Papers from the UK IRC for semiconductor materials Arthur Willoughby Editorial Pages: iii - iii
Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate N. R. GardnerN. J. WoodsJ. J. Harris Papers Pages: 315 - 319
Epitaxial growth mode and silicon/silicon-germanium heterointerfaces J. M. FernándezL. HartB. A. Joyce Papers Pages: 321 - 325
Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy B. A. JoyceJ. H. NeaveT. S. Jones Papers Pages: 327 - 332
STM studies of island formation and surface ordering of Si on GaAs (001), (2×4) and c(4×4): Implications for δ-doping J. L. SudijonoA. R. AveryT. S. Jones Papers Pages: 333 - 339
Influence of segregation in quantum well structures R. MurrayC. BryanS. Lycett Papers Pages: 341 - 345
Novel aspects of oxygen diffusion in silicon M. J. BinnsC. A. LondosJ. H. Tucker Papers Pages: 347 - 353
A comparison of strain relief behaviour of In x Ga1− x As alloy on GaAs (001) and (110) substrates X. ZhangD. W. Pashley Papers Pages: 361 - 367
