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III–V Compound Semiconductors and Devices

An Introduction to Fundamentals

  • Textbook
  • © 2020

Overview

  • Gives a complete pedagogical introduction to III-V compound semiconductors
  • Includes detailed description of the nitride-based technologies
  • Includes chapter-end problems, clear schematics and suggestions for further reading

Part of the book series: Graduate Texts in Physics (GTP)

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Table of contents (10 chapters)

Keywords

About this book

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices.

Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Authors and Affiliations

  • Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, USA

    Keh Yung Cheng

About the author

Keh-Yung Norman Cheng received his Ph.D. degree from Stanford University in 1975 and currently is the Dean of the College of Electrical Engineering and Computer Science at the National Tsing Hua University. In 1979-81 he was a member of Technical Staff at AT&T Bell Laboratories, Murray Hill, New Jersey. Since 1987 he was a professor in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign. He became an emeritus professor in August 2010 and joined the Electrical Engineering Department of the National Tsing Hua University in Taiwan. His special fields of interest are molecular beam epitaxy (MBE), compound semiconductor optoelectronic, and nanostructure device technologies. He has authored or coauthored over 400 journal and conference papers, and two book chapters. He is a Fellow of IEEE and AAAS, and a recipient of the 2007 MBE Innovator Award.

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