Authors:
- Nominated as an outstanding PhD thesis by the Chinese Academy of Sciences
- Reports on important, advanced applications of selective epitaxy on source and drain technology for the 22 nm CMOS node and beyond
- Introduces readers to key integration issues in transistor structures
- Introduces for the first time a kinetic model for SEG of SiGe in nanoscale transistor structures
Part of the book series: Springer Theses (Springer Theses)
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About this book
As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node.
The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its patterndependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Authors and Affiliations
-
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Guilei Wang
About the author
Bibliographic Information
Book Title: Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
Authors: Guilei Wang
Series Title: Springer Theses
DOI: https://doi.org/10.1007/978-981-15-0046-6
Publisher: Springer Singapore
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: Springer Nature Singapore Pte Ltd. 2019
Hardcover ISBN: 978-981-15-0045-9Published: 02 October 2019
Softcover ISBN: 978-981-15-0048-0Published: 02 October 2020
eBook ISBN: 978-981-15-0046-6Published: 20 September 2019
Series ISSN: 2190-5053
Series E-ISSN: 2190-5061
Edition Number: 1
Number of Pages: XVI, 115
Topics: Semiconductors, Circuits and Systems, Nanotechnology and Microengineering