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3-Dimensional Process Simulation

  • Conference proceedings
  • © 1995

Overview

Editors:
  1. J. Lorenz

    1. Bauelementetechnologie, Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Germany

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Table of contents (9 papers)

  1. Front Matter

    Pages i-viii
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  2. Three-Dimensional Topography Simulator: 3D-MULSS and Its Applications

    • Masato Fujinaga, Norihiko Kotani
    Pages 1-29

  3. A Three-Dimensional Process Simulation using Advanced SMART-P program

    • H. Umimoto, S. Odanaka, A. Gohda
    Pages 30-56

  4. 3-D Topography Simulation Using Surface Representation and Central Utilities

    • A. R. Neureuther, R. H. Wang, J. J Helmsen, J. F. Sefler, E. W. Scheckler, R. Gunturi et al.
    Pages 57-76

  5. Three-Dimensional Simulation of Thermal Processes

    • Mark E. Law, Stephen Cea
    Pages 77-94

  6. 3D Process Simulation at IEMN/ISEN

    • B. Baccus, S. Bozek, V. Senez, Z. Z. Wang
    Pages 95-108

  7. 3D Simulation of Topography and Doping Processes at FhG

    • J. Lorenz, E. Bär, A. Burenkov, W. Henke, K. Tietzel, M. Weiß
    Pages 109-135

  8. 3D TCAD at TU Vienna

    • E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, S. Selberherr
    Pages 136-161

  9. Multi-Dimensional TCAD: The PROMPT/DESSIS Approach

    • M. Westermann, T. Feudel, N. Strecker, S. Gappisch, A. Höfler, W. Fichtner
    Pages 162-177

  10. 3D Process Simulation Requirements And Tradeoffs From Industrial Perspective

    • Marius Orlowski
    Pages 178-195

  11. Back Matter

    Pages 196-196
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Keywords

About this book

Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.

Editors and Affiliations

  • Bauelementetechnologie, Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Germany

    J. Lorenz

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