Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Authors: Pichler, Peter
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- About this book
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Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.
- Table of contents (7 chapters)
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Fundamental Concepts
Pages 1-75
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Intrinsic Point Defects
Pages 77-227
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Impurity Diffusion in Silicon
Pages 229-279
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Isovalent Impurities
Pages 281-329
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Dopants
Pages 331-467
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Table of contents (7 chapters)
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Bibliographic Information
- Bibliographic Information
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- Book Title
- Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
- Authors
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- Peter Pichler
- Series Title
- Computational Microelectronics
- Copyright
- 2004
- Publisher
- Springer-Verlag Wien
- Copyright Holder
- Springer-Verlag Wien
- eBook ISBN
- 978-3-7091-0597-9
- DOI
- 10.1007/978-3-7091-0597-9
- Hardcover ISBN
- 978-3-211-20687-4
- Softcover ISBN
- 978-3-7091-7204-9
- Series ISSN
- 0179-0307
- Edition Number
- 1
- Number of Pages
- XXI, 554
- Number of Illustrations
- 40 b/w illustrations
- Topics
