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Microscopy of Semiconducting Materials 2007

Proceedings of the 15th Conference, 2-5 April 2007, Cambridge, UK

  • Conference proceedings
  • © 2008

Overview

Editors:
  1. A. G. Cullis

    1. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK

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  2. P. A. Midgley

    1. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK

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  • Gives a complete overview of nanostructures of all types, from quantum dots, wires to nanotubes
  • Complete study of the effects of semiconductor processing treatment such as oxidatorion, nitridation, ion implantation, and annealing
  • Provides an up-to-date overview of lattice defects and impurity behaviour in semiconducting materials

Part of the book series: Springer Proceedings in Physics (SPPHY, volume 120)

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Table of contents (105 papers)

  1. Front Matter

    Pages i-xiv
    Download chapter PDF

  2. Wide Band-Gap Nitrides

    1. The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key

      • C J Humphreys, M J Galtrey, N van der Laak, R A Oliver, M J Kappers, J S Barnard et al.
      Pages 3-12

    2. Elastic Strain Distribution in GaN/AlN Quantum Dot Structures: Theory and Experiment

      • A Andreev, E Sarigiannidou, E Monroy, B Daudin, J Rouvière
      Pages 13-16

    3. Concentration Evaluation in Nanometre-Sized In x Ga1-x N Islands Using Transmission Electron Microscopy

      • A Pretorius, K Müller, T Yamaguchi, R Kröger, D Hommel, A Rosenauer
      Pages 17-20

    4. Optical Properties of InGaN Quantum Dots With and Without a GaN Capping Layer

      • Q Wang, T Wang, P J Parbrook, J Bai, A G Cullis
      Pages 21-24

    5. Strain Relaxation in an AlGaN/GaN Quantum Well System

      • P D Cherns, C McAleese, M J Kappers, C J Humphreys
      Pages 25-28

    6. Characterisation of InxAl1-xN Epilayers Grown on GaN

      • T C Sadler, M J Kappers, M E Vickers, R A Oliver
      Pages 29-32

    7. Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers

      • J Bai, T Wang, P J Parbrook, K B Lee, Q Wang, A G Cullis
      Pages 33-36

    8. InN Nanorods and Epilayers: Similarities and Differences

      • Z Liliental-Weber, O Kryliouk, H J Park, J Mangum, T Anderson, W Schaff
      Pages 37-40

    9. Residual Strain Variations in MBE-Grown InN Thin Films

      • A Delimitis, Ph Komninou, J Arvanitidis, M Katsikini, S-L Sahonta, E Dimakis et al.
      Pages 41-44

    10. Growth of c-Plane GaN Films on (100) γ-LiAlO2 by Hydride Vapour Phase Epitaxy

      • A Mogilatenko, W Neumann, E Richter, M Weyers, B Velickov, R Uecker
      Pages 45-48

    11. Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire

      • R Kröger, T Paskova, A Rosenauer
      Pages 49-52

    12. Composite Substrates for GaN Growth

      • B Pécz, L Tóth, L Dobos, P Bove, H Lahrèche, R Langer
      Pages 53-56

    13. GaN Layers Grown by MOCVD on Composite SiC Substrate

      • L Tóth, L Dobos, B Pécz, M A di Forte Poisson, R Langer
      Pages 57-60

    14. An Initial Exploration of GaN Grown on a Ge-(111) Substrate

      • Y Zhang, C McAleese, H Xiu, C J Humphreys, R R Lieten, S Degroote et al.
      Pages 61-64

    15. Electron Microscopy Characterization of a Graded AlN/GaN Multilayer Grown by Plasma-Assisted MBE

      • G P Dimitrakopulos, Ph Komninou, Th Kehagias, A Delimitis, J Kioseoglou, S-L Sahonta et al.
      Pages 66-68

    16. The Effect of Silane Treatment of AlxGa1−xN Surfaces

      • N Ketteniss, M J Kappers, C McAleese, R A Oliver
      Pages 69-72

    17. Quantitative Analysis of Deformation Around a Nanoindentation in GaN by STEM Diffraction

      • K K McLaughlin, W J Clegg
      Pages 73-76

    18. Microstructure of (Ga,Fe)N Films Grown by Metal-Organic Chemical Vapour Deposition

      • T Li, C Simbrunner, A Navarro-Quezada, M Wegscheider, M Quast, A Bonanni
      Pages 77-80

    19. Nanostructures on GaN by Microsphere Lithography

      • W N Ng, K N Hui, X H Wang, C H Leung, P T Lai, H W Choi
      Pages 81-84
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Keywords

About this book

This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.

Editors and Affiliations

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK

    A. G. Cullis

  • Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK

    P. A. Midgley

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