Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

1. Front Matter

   Pages i-xii

   PDF

2. Technology and Economics

   1. High Temperature Electronics - Cluster Effects

      • Colin Johnston, Alison Crossley

      Pages 1-10

   2. On the Evolution of SOI Materials and Devices

      • Jean-Pierre Colinge

      Pages 11-26

   3. SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices

      • M.Yu. Barabanenkov, V.V. Aristov, V.N. Mordkovich

      Pages 27-37

3. SOI Material Technologies

   1. Smart Cut Technology: The Path for Advanced SOI Substrates

      • H. Moriceau, C. Lagahe-Blanchard, F. Fournel, S. Pocas, E. Jalaguier, P. Perreau et al.

      Pages 39-52

   2. Porous Silicon Based SOI: History and Prospects

      • V. Bondarenko, G. Troyanova, M. Balucani, A. Ferrari

      Pages 53-64

   3. Achievement of SiGe-on-Insulator Technology

      • Yukari Ishikawa, N. Shibata, S. Fukatsu

      Pages 65-75

   4. CVD Diamond Films for SOI Technologies

      • V. Ralchenko, T. Galkina, A. Klokov, A. Sharkov, S. Chernook, V. Martovitsky

      Pages 77-84

   5. Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator

      • Giorgi Natsvlishvili, Tamaz Butkhuzi, Maia Sharvashidze, Lia Trapaidze, Dimitri Peikrishvili

      Pages 85-90

   6. Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures

      • A. Misiuk, J. Ratajczak, J. Kątcki, I.V. Antonova

      Pages 91-96

   7. SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment

      • O. Martinyuk, D. Mazunov, V. Melnik, Ya. Olikh, V. Popov, B. Romanyuk et al.

      Pages 97-102

   8. Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias

      • M. F. Bain, P. Baine, D. W. McNeill, G. Srinivasan, N. Jankovic, J. McCartney et al.

      Pages 103-108

4. Reliability and Operation of SOI Devices in Harsh Environment

   1. Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices

      • Jalal Jomaah, Francis Balestra

      Pages 109-120

   2. Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs

      • A.N. Nazarov

      Pages 121-132

   3. Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications

      • David Levacq, Vincent Dessard, Denis Flandre

      Pages 133-144

   4. Silicon-on-Insulator Circuits for Application at High Temperatures

      • V. Nakov, D. Nuernbergk, S.G.M. Richter, S. Bormann, V. Schulze, S.B. Richter

      Pages 145-154

   5. High-Voltage SOI Devices for Automotive Applications

      • Jörgen Olsson

      Pages 155-166

   6. Heat Generation Analysis in SOI LDMOS Power Transistors

      • J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo

      Pages 167-178

   7. Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures

      • Uritsky V. Ya.

      Pages 179-184

   8. MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications

      • V. Kilchytska, L. Vancaillie, K. de Meyer, D. Flandre

      Pages 185-190

This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

• CMOS
• Double-diffused metal-oxide-semiconductor transistor
• EEPROM
• EPROM
• PROM
• ROM
• Semiconductor
• Transistor
• electronics
• field-effect transistor
• heterojunction bipolar transistor
• integrated circuit
• metal oxide semiconductur field-effect transistor
• static-induction transistor

• Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

  Denis Flandre

• Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

  Alexei N. Nazarov

• School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

  Peter L.F. Hemment

Policies and ethics