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Electrical Characterization of Silicon-on-Insulator Materials and Devices

  • Book
  • © 1995

Overview

Authors:
  1. Sorin Cristoloveanu

    1. Polytechnic Institute of Grenoble, France

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    You can also search for this author in PubMed   Google Scholar

  2. Sheng S. Li

    1. University of Florida, USA

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    You can also search for this author in PubMed   Google Scholar

Part of the book series: The Springer International Series in Engineering and Computer Science (SECS, volume 305)

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Table of contents (10 chapters)

  1. Front Matter

    Pages i-xv
    Download chapter PDF

  2. Introduction

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 1-6

  3. Methods of Forming SOI Wafers

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 7-44

  4. SOI Devices

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 45-86

  5. Wafer-Screening Techniques

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 87-117

  6. Transport Measurements

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 119-143

  7. SIS Capacitor-Based Characterization Techniques

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 145-184

  8. Diode Measurements

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 185-207

  9. MOS Transistor Characteristics

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 209-273

  10. Transistor-Based Characterization Techniques

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 275-336

  11. Monitoring Transistor Degradation

    • Sorin Cristoloveanu, Sheng S. Li
    Pages 337-373

  12. Back Matter

    Pages 375-381
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Keywords

About this book

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu­ siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri­ butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Authors and Affiliations

  • Polytechnic Institute of Grenoble, France

    Sorin Cristoloveanu

  • University of Florida, USA

    Sheng S. Li

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